UPA862TD NEC, UPA862TD Datasheet

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UPA862TD

Manufacturer Part Number
UPA862TD
Description
RF Bipolar Small Signal NPN Silicon RF Twin
Manufacturer
NEC
Datasheet
1.UPA862TD-T3-A.pdf (12 pages)

Specifications of UPA862TD

Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN
high frequency silicon bipolar chip. The NE851 is an excellent
oscillator chip, featuring low 1/f noise and high immunity to
pushing effects. The NE685 is an excellent buffer transistor,
featuring low noise and high gain. NEC's new ultra small TD
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
FEATURES
ELECTRICAL CHARACTERISTICS
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
• LOW VOLTAGE, LOW CURRENT OPERATION
• SMALL PACKAGE OUTLINE:
• LOW HEIGHT PROFILE:
• TWO DIFFERENT DIE TYPES:
• IDEAL FOR 1-2 GHz OSCILLATORS
1.2 mm x 0.8 mm
Just 0.50 mm high
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
|S
SYMBOLS
21
|S
|S
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
|S
I
I
I
I
Cre
Cre
h
h
CBO
NF
CBO
NF
EBO
EBO
21E
21E
f
f
21E
FE
FE
T
T
guard pin of capacitances meter.
|
|
2
2
|
2
E
|
2
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
Gain Bandwidth at V
Feedback Capacitance
Insertion Power Gain at V
Noise Figure at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
Gain Bandwidth at V
Feedback Capacitance
Insertion Power Gain at V
Insertion Power GainIat V
Noise Figure at V
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
PART NUMBER
1
1
CE
CE
at V
at V
= 3 V, I
= 1 V, I
CE
CE
CE
CE
2
2
= 3 V, I
= 1 V, I
at V
at V
= 3 V, I
= 3 V, I
CE
CE
CE
EB
EB
C
C
CB
CB
CB
= 3 V, I
CB
= 1 V, I
= 1 V, I
= 3 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 1 V, I
= 1 V, I
C
C
= 5 V, I
= 10 V, I
= 3 V, I
= 3 V, I
C
C
= 10 mA, f = 2 GHz
= 15 mA, f = 2 GHz
NEC's NPN SILICON RF
= 10 mA
= 7 mA
(T
C
C
C
C
C
A
=10 mA, f = 2 GHz
=5 mA, f = 2 GHz
=15 mA, f = 2 GHz
E
= 0
= 0
E
E
= 25°C)
E
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
TWIN TRANSISTOR
OUTLINE DIMENSIONS
UNITS
GHz
dB
dB
dB
GHz
nA
nA
pF
nA
nA
dB
dB
pF
California Eastern Laboratories
1.0±0.05
0.8
+0.07
-0.05
Package Outline TD
MIN
100
5.0
3.0
4.5
75
10
7
(TOP VIEW)
UPA862TD
UPA862TD
(Units in mm)
C1
E1
C2
TD
TYP
110
120
0.4
8.5
1.5
6.5
0.6
4.0
5.5
1.9
12
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
1
2
3
(Top View)
Q1
Q2
6
5
4
MAX
100
100
150
600
600
145
0.7
2.5
0.8
2.5
B1
E2
B2

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UPA862TD Summary of contents

Page 1

... Q2 - Ideal oscillator transistor • IDEAL FOR 1-2 GHz OSCILLATORS DESCRIPTION NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain ...

Page 2

... Ambient Temperature REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 0.4 0.3 0.2 0 Collector to Base Voltage, V 1,2 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER Q1 Q2 UPA862TD- 100 mW 180 192 210 Total 150 150 °C -65 to +150 ° 25°C) A 125 150 (° ...

Page 3

TYPICAL PERFORMANCE CURVES Q1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 Base to Emitter Voltage, V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE ...

Page 4

... UPA862TD TYPICAL PERFORMANCE CURVES Q1 DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 100 10 0 Collector Current CURRENT GAIN vs. COLLECTOR CURRENT 1000 100 10 0 Collector Current GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 Collector Current 25° 100 (mA 100 (mA) 100 (mA CURRENT GAIN vs. COLLECTOR CURRENT 1000 100 10 0 ...

Page 5

TYPICAL PERFORMANCE CURVES Q1 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 30 MSG 25 MAG 21e 5 0 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 30 MSG ...

Page 6

... C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 20 MSG 15 MAG 21e Collector Current 25°C) A 100 100 (mA) 100 (mA) UPA862TD Q2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG MAG GHz 21e Collector Current, I (mA) C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz MAG ...

Page 7

TYPICAL PERFORMANCE CURVES Q1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C NOISE FIGURE, ASSOCIATED GAIN ...

Page 8

TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 3.000GHz by 0.050 UPA82TD (Q1 2.5V Frequency S ...

Page 9

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 3.000GHz by 0.050 UPA862TD (Q2 Frequency S 11 GHz MAG ANG 0.10 0.692 - 58.7 0.20 0.653 -100.9 0.30 0.634 -124.2 0.40 0.622 -139.2 0.50 0.616 -149.4 0.60 0.611 -157.1 0.70 0.609 -163.3 0.80 ...

Page 10

... UPA862TD NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS Parameters Q1 NE685 IS 7.0e-16 BF 109 NF 1 VAF 15 IKF 0.19 ISE 7.90e- 1.08 VAR 12.4 IKR infinity ISC 1 RBM 3 IRB 0.005 RC 10 CJE 0.4e-12 VJE 0.81 MJE 0.5 CJC 0.18e-12 VJC 0.75 (1) Gummel-Poon Model (2) AF and KF are 1/f noise parameters and are bias dependant. ...

Page 11

... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 12

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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