NE461M02-T1

Manufacturer Part NumberNE461M02-T1
DescriptionRF Bipolar Power NPN Low Distort Amp
ManufacturerNEC
NE461M02-T1 datasheets

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Specifications of NE461M02-T1

Mounting StyleSMD/SMTTransistor PolarityNPN
Continuous Collector Current0.25 APower Dissipation2 W
Package / CaseSOT-89Lead Free Status / RoHS StatusLead free / RoHS Compliant
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TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
FEATURES
• HIGH COLLECTOR CURRENT:
250 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
• HIGH IP
:
3
37 dBm TYP at 1 GHz
DESCRIPTION
NEC's NE461M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE461M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
ELECTRICAL CHARACTERISTICS
PART NUMBER
1
EIAJ
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
I
Collector Cutoff Current at V
CBO
I
Emitter Cutoff Current at V
EBO
FE 2
h
DC Current Gain at V
= 10 V, I
CE
2
|S
|
Insertion Power Gain at V
21E
1
NF
Noise Figure 1 at V
= 10 V, I
CE
2
NF
Noise Figure 2 at V
= 10 V, I
CE
IM
2nd Order Intermodulation Distortion
2
V
= 10 V, I
= 50 mA, Rs = R
CE
C
Pin = 105 dB µV/75 Ω, f
1
f
= 90 MHz, f = f
- f
2
1
2
IM
3rd Order Intermodulation Distortion
3
V
= 10 V, I
= 50 mA, Rs = R
CE
C
Pin = 105 dB µV/75 Ω, f
1
f
= 200 MHz, f = 2 x f
- f
2
1
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Rs = R
= 50 Ω, tuned.
L
NPN EPITAXIAL SILICON
OUTLINE DIMENSIONS
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
(T
= 25°C)
A
UNITS
= 20 V, I
= 0
µA
CB
E
= 2 V, I
= 0
µA
EB
C
= 50 mA
C
= 10 V, I
= 50 mA, f = 1 GHz
dB
CE
C
3
= 50 mA, f = 500 MHz
dB
C
3
= 50 mA, f = 1 GHz
dB
C
dB
= 75 Ω
L
= 190 MHz
dB
= 75 Ω
L
= 190 MHz
2
NE461M02
(Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.1
1.6±0.2
1.5±0.1
C
E
B
E
0.42
0.42
0.25±0.02
±0.06
±0.06
0.45
1.5
±0.06
3.0
NE461M02
2SC5337
M02
MIN
TYP
0.01
0.03
40
120
7.0
8.3
1.5
2.0
59.0
82.0
California Eastern Laboratories
MAX
5.0
5.0
200
3.5
3.5

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NE461M02-T1 Summary of contents

  • Page 1

    ... NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications ...

  • Page 2

    ... Collector to Emitter Voltage, V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.5 0 Collector Current, Ic (mA) 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 30 NE461M02-T1- 3.0 mA 250 W 2.0 150 °C -65 to +150 ° 25°C) A 0.4 mA 0.3 mA 0 GHz 100 QUANTITY PACKAGING 1000 Tape & Reel DC CURRENT GAIN VS ...

  • Page 3

    TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN vs. COLLECTOR CURRENT 100 Collector Current, Ic (mA) NOISE FIGURE vs. COLLECTOR CURRENT Collector Current, ...

  • Page 4

    ... TYPICAL SCATTERING PARAMETERS j50 j25 j10 GHz 0 -j10 0.1 GHz 0.1 GHz -j25 NE461M02 -j50 FREQUENCY S 11 GHz MAG ANG 0.100 0.603 -142.0 0.200 0.615 -165.0 0.400 0.618 178.5 0.600 0.616 168.9 0.800 0.612 161.2 1.000 0.607 154.4 1.200 0.602 148.0 1 ...

  • Page 5

    ... TYPICAL SCATTERING PARAMETERS j50 j25 j10 GHz 3 GHz -j10 22 0.1 GHz 0.1 GHz -j25 NE461M02 -j50 100 FREQUENCY S 11 GHz MAG ANG 0.100 0.596 -144.8 0.200 0.601 -166.5 0.400 0.601 177.5 0.600 0.600 168.1 0.800 0.597 160.4 1.000 0.593 153.6 1.200 ...

  • Page 6

    Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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