NESG2031M05 NEC, NESG2031M05 Datasheet

no-image

NESG2031M05

Manufacturer Part Number
NESG2031M05
Description
RF Germanium NPN SiGe High Freq
Manufacturer
NEC
Datasheet

Specifications of NESG2031M05

Mounting Style
SMD/SMT
Power Dissipation
175 mW
Package / Case
M05
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG2031M05
Manufacturer:
NEC
Quantity:
20 000
Part Number:
NESG2031M05-A
Manufacturer:
CEL
Quantity:
135
Part Number:
NESG2031M05-T1
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
NESG2031M05-T1-A
Manufacturer:
NEC
Quantity:
6 054
Part Number:
NESG2031M05-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
DESCRIPTION
NEC's NESG2031M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide
range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
Notes:
ELECTRICAL CHARACTERISTICS
FEATURES
Date Published: June 22, 2005
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
• LOW NOISE FIGURE:
• HIGH MAXIMUM STABLE GAIN:
• LOW PROFILE M05 PACKAGE:
• Pb Free Available (-A)
V
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
MSG = 21.5 dB at 2 GHz
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
CEO
1. MSG =
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
SYMBOLS
= 5 V (Absolute Maximum)
|S
MSG
OIP
P
I
I
h
NF
NF
C
CBO
EBO
G
G
21E
f
1dB
FE
T
re
a
a
3
|
2
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
S
S
21
12
Noise Figure at V
Z
Associated Gain at V
Z
Noise Figure at V
Z
Associated Gain at V
Z
Maximum Stable Gain
Insertion Power Gain at V
Output Power at 1dB Compression Point at
V
Output 3rd Order Intercept Point at V
Gain Bandwidth Product at V
Reverse Transfer Capacitance
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
S
S
S
S
CE
= Z
= Z
= Z
= Z
= 3 V, I
SOPT
SOPT
SOPT
SOPT
, ZL = Z
, ZL = Z
, ZL = Z
, ZL = Z
C
= 20 mA, f = 2 GHz
HIGH FREQUENCY TRANSISTOR
PARAMETERS AND CONDITIONS
3
CE
CE
at V
LOPT
LOPT
LOPT
LOPT
= 2 V, I
= 2 V, I
CE
CE
(T
PACKAGE OUTLINE
1
CE
at V
A
= 2 V, I
= 2 V, I
PART NUMBER
= 2 V, I
= 25°C)
CE
EB
C
C
CE
CB
= 3 V, I
CE
= 5 mA, f = 5.2 GHz,
= 5 mA, f = 2 GHz,
= 1 V, I
= 3 V, I
2
NEC's NPN SiGe
C
C
= 5V, I
at V
= 3 V, I
C
= 5 mA, f = 5.2 GHz,
= 5 mA, f = 2 GHz,
= 5 mA
C
CB
C
CE
C
= 20 mA, f = 2 GHz
E
= 0
= 2 V, I
C
= 20 mA, f = 2 GHz
= 0
= 3 V, I
= 20 mA, f = 2 GHz
C
C
= 0 mA, f = 1 GHz
= 20 mA, f = 2 GHz
M05
NESG2031M05
NPN SiGe RF TRANSISTOR
UNITS
dBm
dBm
GHz
dB
dB
dB
dB
dB
dB
pF
nA
nA
15.0
19.0
16.0
MIN
130
20
NESG2031M05
M05
TYP
10.0
17.0
21.5
18.0
0.15
190
1.3
0.8
13
23
25
MAX
0.25
100
100
260
1.1

Related parts for NESG2031M05

NESG2031M05 Summary of contents

Page 1

... Pb Free Available (-A) DESCRIPTION NEC's NESG2031M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. ...

Page 2

... SYMBOLS V 13 j-c V 5 175 ORDERING INFORMATION °C 150 PART NUMBER °C -65 to +150 NESG2031M05-T1 NESG2031M05-T1-A 3 kpcs/reel • Pb Free (T = 25ºC) A 125 150 (°C) A 0.0001 0.9 1.0 (V) BE NESG2031M05 PARAMETERS UNITS Junction to Case Resistance °C/W QUANTITY SUPPLY FORM 3 kpcs/reel • Pin 3 (Collector), Pin 4 (Emitter) face the perforation • ...

Page 3

... DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current, l (mA 25ºC) A 0.9 1.0 ( 000 100 100 100 NESG2031M05 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 µ 200 A µ 180 A 30 µ 160 A µ 25 140 A µ 120 A 20 µ 100 A µ µ µ µ ...

Page 4

... S21e 0 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 35 MSG 30 MAG 21e 0 Frequency, f (GHz 25ºC) A 100 100 100 NESG2031M05 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 Collector Current, l (mA) C INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG 30 MAG S21e 0 100 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs ...

Page 5

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 MSG 21e Collector Current 25ºC) A 100 (mA) C 100 (mA) C MAG 100 (mA) C NESG2031M05 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 MSG MAG 21e 100 Collector Current, I (mA) C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG GHz ...

Page 6

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 20 MAG 21e Collector Current 25ºC) A 100 (mA) MAG 100 (mA) 100 (mA) NESG2031M05 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG GHz 21e Collector Current, I (mA) C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 MSG ...

Page 7

... COLLECTOR CURRENT Collector Current 25º (dBm (dBm GHz 0 100 (mA) C NESG2031M05 OUTPUT POWER, COLLECTOR CUR- RENT vs. INPUT POWER GHz (RF OFF out -20 -15 - Input Power, P (dBm) in NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz 100 Collector Current, I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 5 ...

Page 8

... Collector Current 25º GHz 0 100 (mA 5.2 GHz 0 100 (mA GHz 0 100 (mA) NESG2031M05 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5.2 GHz 100 Collector Current, I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz 100 Collector Current, I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ...

Page 9

... NESG2031M05 +90º +135º +45º +0º -135º -45º -90º MAG ANG 0.961 -12.14 0.109 0.917 -22 ...

Page 10

... NESG2031M05 +90º +135º +45º +0º -135º -45º -90º MAG 22 MAG ANG (dB) 0.900 -20.46 ...

Page 11

... OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M05 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 3 2.0 ±0.1 4 +0.1 0.30 -0.05 0.59±0.05 PIN CONNECTIONS 1. Base 2. Emitter 3. Collector 4. Emitter 2 0.65 1.30 0.65 1 +0.1 0.11 -0.05 NESG2031M05 ...

Page 12

... C CBPKG 0 C CEPKG 0.8 C BEPKG 4e- 0 1.11 MODEL TEST CONDITIONS 1.3 Frequency: 0 GHz 5.2 Bias: V Date: 09/2003 0 1 NESG2031M05 Collecto r NESG2031M05 0.13 pF 0.01 pF 0.03 pF 0.9 nH BPKG 1.0 nH CPKG 0.19 nH EPKG = Business Partner of NEC Compound Semiconductor Devices, Ltd. ...

Page 13

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

Related keywords