NE5520279A NEC, NE5520279A Datasheet

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NE5520279A

Manufacturer Part Number
NE5520279A
Description
RF MOSFET Small Signal L/S Band Med Power
Manufacturer
NEC
Datasheet

Specifications of NE5520279A

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
15 V
Gate-source Breakdown Voltage
5 V
Continuous Drain Current
0.6 A
Power Dissipation
12.5 W
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
0.0013 S
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE5520279A-A
Manufacturer:
CEL
Quantity:
135
ELECTRICAL CHARACTERISTICS
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the power amplifier
for mobile and fixed wireless applications. Die are manu-
factured using NEC's NEWMOS technology (NEC's 0.6 μm
WSi gate lateral MOSFET) and housed in a surface mount
package.
Notes:
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE:
• HIGH OUTPUT POWER:
• HIGH LINEAR GAIN:
• HIGH POWER ADDED EFFICIENCY:
• SINGLE SUPPLY:
5.7
+32 dBm TYP
10 dB TYP @ 1.8 GHz
45% TYP at 1.8 GHz
2.8 to 6.0 V
1. DC performance is 100% testing. RF performance is testing several samples per wafer.
2. P
x
Wafer rejection criteria for standard devices is 1 reject for several samples.
5.7
SYMBOLS
in
BV
= 5 dBm
P
η
x
I
I
R
V
G
GSS
DSS
g
1.1 mm MAX
OUT
ADD
I
TH
TH
D
DSS
m
L
MEDIUM POWER SILICON LD-MOSFET
Output Power
Linear Gain
Power Added Efficiency
Drain Current
Gate-to-Source Leakage Current
Saturated Drain Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Transconductance
Drain-to-Source Breakdown Voltage
Thermal Resistance
PACKAGE OUTLINE
PART NUMBER
CHARACTERISTICS
NEC'
S
(T
A
3.2 V, 2 W, L&S BAND
= 25°C)
UNITS
°C/W
dBm
mA
dB
nA
nA
%
V
S
V
30.5
MIN
1.0
40
15
NE5520279A
OUTLINE DIMENSIONS
APPLICATIONS
• DIGITAL CELLULAR PHONES:
• 0.7-2.5 GHz FIXED WIRELESS ACCESS
• W-LAN
• SHORT RANGE WIRELESS
• RETAIL BUSINESS RADIO
• SPECIAL MOBILE RADIO
TYP
32.0
3.2 V DCS1800 Handsets
79A
800
1.4
1.3
10
45
18
Gate
MAX
California Eastern Laboratories
100
100
1.9
8
4.2 MAX.
5.7 MAX.
Source
PACKAGE OUTLINE 79A
0.4±0.15
I
DSQ
Drain
P
V
= 700 mA, P
V
f = 1.8 GHz, V
IN
DS
DS
TEST CONDITIONS
= 5 dBm for Linear Gain
Channel-to-Case
= 3.5 V, I
= 3.5 V, I
NE5520279A
I
V
V
DSS
(Units in mm)
GS
DS
Gate
= 10 μA
= 5.0 V
= 6.0 V
IN
DS =
= 25 dBm, except
DS =
(Bottom View)
DS
1.5±0.2
Source
3.6±0.2
= 3.2 V,
700 mA
1 mA
0.8 MAX.
Drain

Related parts for NE5520279A

NE5520279A Summary of contents

Page 1

... TYP at 1.8 GHz • SINGLE SUPPLY: 2.8 to 6.0 V DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplifier for mobile and fixed wireless applications. Die are manu- factured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package ...

Page 2

... D P Total Power Dissipation T T Channel Temperature CH T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 s. ORDERING INFORMATION PART NUMBER QTY NE5520279A-T1-A RECOMMENDED OPERATING LIMITS °C) A SYMBOLS UNITS RATINGS 5.0 GS ...

Page 3

TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER 1.8 GHz 300 out ...

Page 4

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 S 11 j10 100 -j10 -j25 -j50 NE5520279A 400 FREQUENCY S 11 GHz MAG ANG 0.100 0.885 -152.5 0.200 0.885 -166.9 0.300 0.883 -172.4 0.400 ...

Page 5

... APPLICATION CIRCUIT (2.40-2.48 GHz C11 P1 GND C13 J1 IN C14 C15 er=4.2 t=0.028 5.74mm .30mm .63mm J3 +Vg C13 C11 INPUT NE5520279A PARTS LIST 1 SD-500881 1 TF-100637 4 2 MA101J C2,C3 1 MCR03J200 R1 1 600S2R7CW C4 1 600S2R2BW C15 1 600S1R2BW C14 2 600S5R6CW C1 600S3R3CW C6 2 TAJB475K010R C12, C13 2 GRM40X7R104K025BL C10, C11 ...

Page 6

TYPICAL APPLICATION CIRCUIT PERFORMANCE OUTPUT POWER vs. INPUT POWER 36 f= 2.44 GHz Input Power, P (dBm 25°C) A IM3 vs. OUTPUT POWER -20.0 f= ...

Page 7

... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 8

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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