BLF6G38LS-50 NXP Semiconductors, BLF6G38LS-50 Datasheet - Page 3

• Manufacturer Part Number: BLF6G38LS-50
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38LS-50

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 5.6S
• Drain Source Resistance (max): 290@6.15Vmohm
• Reverse Capacitance (typ): 1.17@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38LS-50,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G38-50_BLF6G38LS-50
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel
bandwidth is 1.23 MHz; f
V
circuit.
[1]
The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
P
G
RL
η
ACPR
ACPR
DSS
DSX
GSS
j
DS
DS
fs
D
(BR)DSS
GS(th)
L(M)
th(j-case)
DS(on)
rs
p
= 25
in
= 28 V; I
Measured within 30 kHz bandwidth.
= 28 V; I
885k
1980k
°
C per section; unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
feedback capacitance
Thermal characteristics
Characteristics
Application information
Dq
Parameter
peak output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz) P
Parameter
thermal resistance from
junction to case
Dq
= 450 mA; T
= 450 mA; P
All information provided in this document is subject to legal disclaimers.
1
= 3400 MHz; f
Rev. 02 — 1 June 2010
case
BLF6G38-50; BLF6G38LS-50
L
= 25
= P
L(1dB)
°
C; unless otherwise specified, in a class-AB production
Conditions
T
P
2
case
L
= 3500 MHz; f
; f = 3600 MHz.
= 50 W
Conditions
V
V
V
V
V
V
I
V
f = 1 MHz
= 80 °C;
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 2.8 A
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= +11 V; V
= 10 V; I
= V
= 0 V; V
GS(th)
GS(th)
Conditions
P
P
P
P
P
3
D
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 3600 MHz; RF performance at
DS
DS
D
D
Type
BLF6G38-50
BLF6G38LS-50
= 0.4 mA
+ 3.75 V;
+ 3.75 V;
= 80 mA
= 2.8 A
DS
WiMAX power LDMOS transistor
= 28 V
= 28 V;
= 9 W
= 9 W
= 9 W
= 9 W
= 9 W
= 9 W
= 0 V
[1]
[1]
Min
65
1.4
-
11.8
-
-
-
-
Min
65
12.5 14
-
20
−46
−62
© NXP B.V. 2010. All rights reserved.
Typ
-
2
-
16.4
-
5.6
0.18
1.17
Typ
0.9
0.7
Typ
70
−10
23
−49
−64
Max
-
2.4
2.8
-
280
-
0.29
-
Max
-
-
-
-
-
-
Unit
-
-
3 of 13
Unit
W
dB
dB
%
dBc
dBc
Unit
V
V
μA
nA
S
Ω
pF
A