RB095T-60 Rohm Semiconductor, RB095T-60 Datasheet

DIODE SCHOTTKY 60V 3A TO220FN

RB095T-60

Manufacturer Part Number
RB095T-60
Description
DIODE SCHOTTKY 60V 3A TO220FN
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RB095T-60

Voltage - Forward (vf) (max) @ If
580mV @ 3A
Current - Reverse Leakage @ Vr
300µA @ 60V
Current - Average Rectified (io) (per Diode)
3A
Voltage - Dc Reverse (vr) (max)
60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220FN-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB095T-60
Manufacturer:
ROHM/罗姆
Quantity:
20 000
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
Switching power supply
1) Cathode common type.
(TO-220)
2) Low I
3) High reliability
Silicon epitaxial planer
Reverse voltage (repetitive)
Reverse voltage(DC)
Average rectified forward current (*1)
Fprward current surge peak (60Hz / 1cyc)
Junction temperature
Storage temperature
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C
Forward voltage
Reverse current
Thermal impedance
Schottky barrier diode
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristic (Ta=25°C)
RB095T-60
R
Parameter
Parameter
Dimensions (Unit : mm)
Symbol
Symbol
Tstg
V
I
jc
V
FSM
V
Io
Tj
I
RM
R
R
F
6
1/3
Min.
-
-
-
-40 to +150
Limits
100
150
Typ.
60
60
6
-
-
-
Max.
0.58
300
3.0
C/W
Unit
Unit
A
C
C
V
V
A
A
V
I
V
junction to case
Structure
F
R
=3A
(1) (2) (3)
=60V
2010.02 - Rev.D
Conditions

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RB095T-60 Summary of contents

Page 1

... Schottky barrier diode RB095T-60 Applications Switching power supply Features 1) Cathode common type. (TO-220) 2) Low High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage(DC) Average rectified forward current (*1) Fprward current surge peak (60Hz / 1cyc) ...

Page 2

... RB095T-60 Electrical characteristic curves 10 Ta=150°C Ta=125C 1 Ta=25°C Ta=75C Ta=-25°C 0.1 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : V (mV CHARACTERISTICS F F 550 Ta=25C I =3A F 540 n=30pcs 530 AVE:532.4mV 520 510 500 V DISPERSION MAP ...

Page 3

... RB095T- Sin(θ=180) D=1 REVERSE VOLTAGE:V ( CHARACTERISTICS break at 30kV 25 20 AVE:12.7kV C=200pF C=100pF R=0 R=1.5k ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.   D=t Tj=150℃ D=1/2 5 Sin(θ =180 100 125 60 AMBIENT TEMPERATURE : Ta(℃) Derating Curve" ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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