RB095T-60 Rohm Semiconductor, RB095T-60 Datasheet - Page 2

• Manufacturer Part Number: RB095T-60
• Description: DIODE SCHOTTKY 60V 3A TO220FN
• Manufacturer: Rohm Semiconductor

Specifications of RB095T-60

• Voltage - Forward (vf) (max) @ If: 580mV @ 3A
• Current - Reverse Leakage @ Vr: 300µA @ 60V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220FN-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

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Electrical characteristic curves
RB095T-60
0.01
1000
0.1
550
540
530
520
510
500
300
250
200
150
100
10
100
50
1
10
0
0
1
Ta=75C
100
Ta=125C
FORWARD VOLTAGE : V
Ta=150°C
200
I
V
FSM
F
V
I
-I
FSM
F
-t CHARACTERISTICS
F
AVE:532.4mV
300
DISPERSION MAP
CHARACTERISTICS
DISPERSION MAP
AVE:73.0A
TIME:t(ms)
400
10
Ifsm
500
Ifsm
Ta=-25°C
Ta=25°C
600
F
(mV)
Ta=25C
8.3ms
n=30pcs
I
F
=3A
t
700
1cyc
800
100
1000000
100000
10000
200
180
160
140
120
100
100
1000
0.1
0.01
80
60
40
20
30
25
20
15
10
100
10
0.1
0
5
0
10
1
0.001
1
0
IM=100mA
0.01
10
1ms
REVERSE VOLTAGE : V
Rth-t CHARACTERISTICS
300us
V
R
trr DISPERSION MAP
-I
I
R
time
0.1
20
R
AVE:20.8uA
DISPERSION MAP
AVE:8.30ns
CHARACTERISTICS
TIME:t(s)
I
2/3
F
=3A
30
1
Ta=150°C
Ta=125°C
40
10
Ta=75C
Ta=25C
Ta=-25C
Irr=0.25*I
Ta=25C
n=30pcs
Ta=25C
V
n=10pcs
R
I
F
(V)
I
R
=0.5A
R
Rth(j-c)
=60V
=1A
Rth(j-a)
50
100
R
60
1000
1000
100
1000
10
10
100
800
750
700
650
600
550
500
450
400
350
300
5
0
10
1
1
0
0
Sin(θ=180)
I
FSM
5
FORWARD CURRENT : Io(A)
REVERSE VOLTAGE : V
2
V
Io-Pf CHARACTERISTICS
-CYCLE CHARACTERISTICS
R
AVERAGE RECTIFIED
-Ct CHARACTERISTICS
Ct DISPERSION MAP
NUMBER OF CYCLES
10
AVE:514.4p
4
D=1/2
Ifsm
10
15
2010.02 - Rev.D
6
8.3ms
20
DC
R
1cyc
Data Sheet
(V)
Ta=25C
n=10pcs
f=1MHz
f=1MHz
V
8.3ms
8
R
25
=0V
100
30
10