VF20120C-E3/4W Vishay, VF20120C-E3/4W Datasheet

VF20120C-E3/4W

Manufacturer Part Number

VF20120C-E3/4W

Description

DIODE SCHTKY DL 120V 10A TO220-3

Manufacturer

Vishay

Datasheet

1.VF20120C-E34W.pdf (5 pages)

Specifications of VF20120C-E3/4W

Voltage - Forward (vf) (max) @ If

900mV @ 10A

Current - Reverse Leakage @ Vr

700µA @ 120V

Current - Average Rectified (io) (per Diode)

10A

Voltage - Dc Reverse (vr) (max)

120V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads, Isolated), ITO-220AB

Product

Schottky Diodes

Peak Reverse Voltage

120 V

Forward Continuous Current

20 A

Max Surge Current

120 A

Configuration

Dual Common Cathode

Forward Voltage Drop

0.9 V @ 10 A

Maximum Reverse Leakage Current

700 uA

Operating Temperature Range

- 40 C to + 150 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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Document Number: 89040

Revision: 24-Jun-09

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

Non-repetitive avalanche energy

at T

Peak repetitive reverse current at t

Voltage rate of change (rated V

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

= 38 °C ± 2 °C per diode

PIN 1

PIN 2

PIN 1

PIN 3

= 25 °C, L = 60 mH per diode

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

TO-220AB

TO-263AB

V20120C

VB20120C

at I

F(AV)

FSM

RRM

max.

= 10 A

HEATSINK

CASE

PIN 2

TMBS

PDD-Americas@vishay.com, PDD-Asia@vishay.com,

For technical questions within your region, please contact one of the following:

)

= 2 µs, 1 kHz,

= 25 °C unless otherwise noted)

PIN 1

PIN 3

PIN 1

PIN 3

TO-262AA

ITO-220AB

VF20120C

VI20120C

2 x 10 A

Ultra Low V

150 °C

0.64 V

120 V

120 A

V20120C, VF20120C, VB20120C & VI20120C

per device

per diode

PIN 2

New Product

SYMBOL

= 0.54 V at I

dV/dt

F(AV)

, T

RRM

FSM

RRM

STG

FEATURES

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-262AA

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Trench MOS Schottky technology

• Low forward voltage drop, low power

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF

• Solder bath temperature 275 °C maximum, 10 s,

• Compliant to RoHS directive 2002/95/EC and in

V20120C

losses

maximum peak of 245 °C (for TO-263AB package)

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

accordance to WEEE 2002/96/EC

PDD-Europe@vishay.com

TO-220AB,

= 5 A

Vishay General Semiconductor

VF20120C

- 40 to + 150

10 000

1500

120

0.5

ITO-220AB,

VB20120C

VI20120C

TO-263AB

www.vishay.com

UNIT

V/µs

°C

and

Related parts for VF20120C-E3/4W

VF20120C-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 89040 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20120C, VF20120C, VB20120C & VI20120C Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

Page 2

... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V20120C-E3/4W ITO-220AB VF20120C-E3/4W TO-263AB VB20120C-E3/4W TO-263AB VB20120C-E3/8W TO-262AA VI20120C-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89040 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20120C, VF20120C, VB20120C & VI20120C 10 1 0.01 1.2 1.4 1.6 Figure 6. Typical Transient Thermal Impedance Per Diode ...

Page 4

... V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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