VF20150C-E3/4W Vishay, VF20150C-E3/4W Datasheet

DIODE SCHTKY DL 150V 10A TO220-3

VF20150C-E3/4W

Manufacturer Part Number
VF20150C-E3/4W
Description
DIODE SCHTKY DL 150V 10A TO220-3
Manufacturer
Vishay
Datasheet

Specifications of VF20150C-E3/4W

Voltage - Forward (vf) (max) @ If
1.2V @ 10A
Current - Reverse Leakage @ Vr
150µA @ 150V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
150V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads, Isolated), ITO-220AB
Product
Schottky Diodes
Peak Reverse Voltage
150 V
Forward Continuous Current
20 A
Max Surge Current
120 A
Configuration
Dual Common Cathode
Forward Voltage Drop
1.2 V @ 10 A
Maximum Reverse Leakage Current
150 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VF20150C-E3/4W
Manufacturer:
SANKEN
Quantity:
110
Company:
Part Number:
VF20150C-E3/4W
Quantity:
70 000
Company:
Part Number:
VF20150C-E3/4W
Quantity:
70 000
Document Number: 89046
Revision: 24-Jun-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
Peak repetitive reverse current at t
T
Voltage rate of change (rated V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
J
= 38 °C ± 2 °C per diode
J
PIN 2
PIN 1
= 25 °C, L = 60 mH per diode
PIN 1
PIN 3
V
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
K
F
VB20150C
TO-220AB
TO-263AB
V20150C
at I
T
V
I
J
I
F(AV)
FSM
RRM
F
max.
= 10 A
1
HEATSINK
K
CASE
PIN 2
2
1
2
TMBS
3
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
p
A
®
= 2 µs, 1 kHz,
= 25 °C unless otherwise noted)
K
PIN 1
PIN 3
PIN 1
PIN 3
2 x 10 A
Ultra Low V
ITO-220AB
150 °C
VF20150C
TO-262AA
0.69 V
VI20150C
150 V
120 A
V20150C, VF20150C, VB20150C & VI20150C
per device
per diode
PIN 2
PIN 2
K
1
1
New Product
2
2
3
3
F
= 0.59 V at I
SYMBOL
T
V
J
I
dV/dt
I
I
F(AV)
E
V
, T
RRM
FSM
RRM
AC
AS
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
losses
maximum peak of 245 °C (for TO-263AB package)
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
accordance to WEEE 2002/96/EC
V20150C
F
PDD-Europe@vishay.com
TO-220AB,
= 5 A
Vishay General Semiconductor
VF20150C VB20150C
- 55 to + 150
10 000
1500
150
120
0.5
20
10
70
ITO-220AB,
VI20150C
TO-263AB
www.vishay.com
UNIT
V/µs
mJ
°C
V
A
A
A
V
and
1

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VF20150C-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 89046 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20150C, VF20150C, VB20150C & VI20150C Vishay General Semiconductor Ultra Low FEATURES • ...

Page 2

... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V20150C-E3/4W ITO-220AB VF20150C-E3/4W TO-263AB VB20150C-E3/4W TO-263AB VB20150C-E3/8W TO-262AA VI20150C-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 89046 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20150C, VF20150C, VB20150C & VI20150C 10 1 0.01 1.2 1.4 1.6 Figure 6. Typical Transient Thermal Impedance Per Diode ...

Page 4

... V20150C, VF20150C, VB20150C & VI20150C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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