BAS21AVD,135 NXP Semiconductors, BAS21AVD,135 Datasheet
BAS21AVD,135
Manufacturer Part Number
BAS21AVD,135
Description
DIODE ARRAY SW 200V SOT457
Manufacturer
NXP Semiconductors
Datasheet
1.BAS21AVD135.pdf
(12 pages)
Specifications of BAS21AVD,135
Voltage - Dc Reverse (vr) (max)
200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SC-74-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Voltage - Forward (vf) (max) @ If
-
Current - Average Rectified (io) (per Diode)
-
Diode Configuration
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059099135
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package.
Table 1.
[1]
[2]
[3]
Symbol
Per diode
I
I
V
t
F
R
rr
R
BAS21AVD
High-voltage switching diodes
Rev. 1 — 10 January 2011
High switching speed: t
Reverse voltage: V
Repetitive peak reverse voltage:
V
Small SMD plastic package
High-voltage switching in surface-mounted circuits
Automotive
Communication
Pulse test: t
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
RRM
≤ 250 V
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
p
≤ 300 μs; δ ≤ 0.02.
F
R
= 30 mA to I
≤ 200 V
rr
≤ 50 ns
R
= 30 mA; R
V
Conditions
R
= 200 V
L
= 100 Ω; measured at I
Low capacitance: C
AEC-Q101 qualified
Repetitive peak forward current:
I
FRM
≤ 1 A
[1][2]
[1]
[3]
Min
-
-
-
-
R
= 3 mA.
Typ
-
25
16
-
Product data sheet
d
≤ 5 pF
Max
200
100
200
50
V
Unit
mA
nA
ns
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