BAS21AVD,135 NXP Semiconductors, BAS21AVD,135 Datasheet - Page 3

• Manufacturer Part Number: BAS21AVD,135
• Description: DIODE ARRAY SW 200V SOT457
• Manufacturer: NXP Semiconductors

Specifications of BAS21AVD,135

• Voltage - Dc Reverse (vr) (max): 200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (vf) (max) @ If: -
• Current - Average Rectified (io) (per Diode): -
• Diode Configuration: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059099135

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS21AVD
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
[2]
[3]
Table 7.
T
[1]
[2]
Symbol
Per device; one diode loaded
P
T
T
T
Symbol
Per device; one diode loaded
R
R
Symbol
Per diode
V
I
C
t
R
rr
amb
j
amb
stg
tot
F
th(j-a)
th(j-sp)
d
Pulse test: t
T
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Soldering point of cathode tab.
Pulse test: t
When switched from I
= 25
j
= 25 °C prior to surge.
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Limiting values
Thermal characteristics
Characteristics
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
p
p
≤ 300 μs; δ ≤ 0.02.
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
F
Rev. 1 — 10 January 2011
= 30 mA to I
…continued
R
= 30 mA; R
I
f = 1 MHz; V
Conditions
I
V
V
F
F
R
R
= 100 mA
= 200 mA
= 200 V
= 200 V; T
Conditions
T
Conditions
in free air
amb
L
= 100 Ω; measured at I
≤ 25 °C
R
j
= 0 V
= 150 °C
High-voltage switching diodes
[3]
[4]
[1]
[2]
[3]
[1]
[2]
Min
-
-
-
−65
−65
Min
-
-
-
Min
-
-
-
-
-
-
R
= 3 mA.
BAS21AVD
Typ
-
-
-
Typ
-
-
25
-
0.6
16
© NXP B.V. 2011. All rights reserved.
Max
250
295
150
+150
+150
Max
500
425
140
Max
1
1.25
100
100
5
50
Unit
mW
mW
°C
°C
°C
2
2
.
.
Unit
K/W
K/W
K/W
Unit
V
mV
nA
μA
pF
ns
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