RB095T-90 Rohm Semiconductor, RB095T-90 Datasheet - Page 2

• Manufacturer Part Number: RB095T-90
• Description: DIODE SCHOTTKY 90V 3A TO220FN
• Manufacturer: Rohm Semiconductor

Specifications of RB095T-90

• Voltage - Forward (vf) (max) @ If: 750mV @ 3A
• Current - Reverse Leakage @ Vr: 150µA @ 90V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 90V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220FN-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

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Electrical characteristic curves
RB095T-90
1000
300
250
200
150
100
750
740
730
720
710
700
100
50
10
0.01
0
0.1
10
1
1
0
Ta=75C
100 200 300 400 500 600 700 800 900
Ta=125C
FORWARD VOLTAGE : V
I
V
FSM
Ta=150C
I
F
V
FSM
-I
AVE:715.7mV
F
-t CHARACTERISTICS
F
AVE:86.0A
DISPERSION MAP
CHARACTERISTICS
DISPERSION MAP
TIME:t(ms)
10
Ifsm
Ifsm
Ta=25C
Ta=-25C
8.3ms
F
Ta=25C
n=30pcs
t
(mV)
I
F
=10A
1cyc
100
100000
10000
1000
200
180
160
140
120
100
0.01
100
100
80
60
40
20
0.1
30
25
20
15
10
0.1
10
10
0
5
0
1
1
0.001
0
IM=100mA
10
0.01
1ms
20
REVERSE VOLTAGE : V
300us
Rth-t CHARACTERISTICS
V
R
-I
I
AVE:13.7uA
time
30
R
trr DISPERSION MAP
R
0.1
DISPERSION MAP
AVE:8.30ns
CHARACTERISTICS
2/3
TIME:t(s)
40
I
F
=6A
Ta=150C
1
50
60
10
Ta=75°C
Ta=25C
Ta=-25°C
70
Irr=0.25*I
Ta=125C
R
Ta=25C
n=30pcs
Ta=25C
V
n=10pcs
(V)
I
F
Rth(j-a)
Rth(j-c)
R
I
=0.5A
R
=90V
=1A
100
80
R
90
1000
1000
1000
400
390
380
370
360
350
340
330
320
310
300
100
100
10
10
10
1
8
6
4
2
0
1
0
0
FORWARD CURRENT : Io(A)
Sin(θ=180)
REVERSE VOLTAGE:V
V
Io-Pf CHARACTERISTICS
2
I
R
FSM
AVERAGE RECTIFIED
-Ct CHARACTERISTICS
Ct DISPERSION MAP
-CYCLE CHARACTERISTICS
AVE:357.9pF
10
NUMBER OF CYCLES
4
D=1/2
Ifsm
10
2010.02 - Rev.D
20
6
8.3ms
DC
Data Sheet
R
(V)
f=1MH
1cyc
Ta=25C
n=10pcs
f=1MHz
V
R
8
=0V
8.3ms
30
10
100