MMBD7000LT1G ON Semiconductor, MMBD7000LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBD7000LT1G
• Description: DIODE SWITCH DUAL 100V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBD7000LT1G

• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 3µA @ 100V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.5 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 3 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 1.5 pF
• Current, Forward: 200 mA
• Current, Surge: 500 mA
• Package Type: SOT-23 (TO-236AB)
• Power Dissipation: 225 mW
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 4 ns
• Voltage, Forward: 1.1 V
• Voltage, Reverse: 100 V
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 3uA
• Peak Non-repetitive Surge Current (max): 0.5A
• Forward Voltage: 1.1V
• Operating Temp Range: -55C to 150C
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBD7000LT1GOS; MMBD7000LT1GOS; MMBD7000LT1GOSTR

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Forward Voltage
Reverse Recovery Time
Capacitance (V
(I
(V
(V
(V
(I
(I
(I
(I
50 W OUTPUT
GENERATOR
(BR)
F
F
F
F
R
R
R
= 1.0 mAdc)
= 10 mAdc)
= 100 mAdc)
= I
PULSE
= 50 Vdc)
= 100 Vdc)
= 50 Vdc, 125 C)
820 W
R
= 100 mAdc)
= 10 mAdc) (Figure 1)
0.1 mF
R
= 0 V)
2.0 k
100 mH
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
Characteristic
DUT
2. Input pulse is adjusted so I
3. t
p
Figure 1. Recovery Time Equivalent Test Circuit
(T
» t
A
rr
= 25 C unless otherwise noted) (EACH DIODE)
0.1 mF
OSCILLOSCOPE
50 W INPUT
SAMPLING
MMBD7000LT1
R(peak)
V
2
R
t
is equal to 10 mA.
r
INPUT SIGNAL
10%
90%
t
p
t
Symbol
V
I
I
V
(BR)
I
R2
R3
t
C
R
rr
F
F
) of 10 mA.
I
I
R
F
0.55
0.67
0.75
Min
100
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
Max
0.82
100
1.0
3.0
0.7
1.1
4.0
1.5
i
R(REC)
−
= 1.0 mA)
= 1.0 mA
t
mAdc
Unit
Vdc
Vdc
pF
ns