MBR30H100CTG ON Semiconductor, MBR30H100CTG Datasheet
MBR30H100CTG
Specifications of MBR30H100CTG
Available stocks
Related parts for MBR30H100CTG
MBR30H100CTG Summary of contents
Page 1
MBR30H100CT, MBRF30H100CT SWITCHMODE™ Power Rectifier 100 Features and Benefits • Low Forward Voltage: 0. 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • Total (15 A ...
Page 2
... DC Voltage 25° Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number MBR30H100CT MBR30H100CTG MBRF30H100CTG Rating − Junction−to−Case − Junction−to−Ambient − Junction−to−Case − Junction−to−Ambient (Per Diode Leg) ...
Page 3
T = 150°C J 1.0 125°C 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F, Figure 1. Typical Forward Voltage 1E−01 1E− 150°C J 1E− 125°C ...
Page 4
T = 175° SQUARE WAVE AVERAGE FORWARD CURRENT (AMPS) F(AV) ...
Page 5
D = 0.5 0.2 1.0 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT 100 D = 0.5 0.2 10 0.1 0.05 0.02 1.0 0.01 0.1 0.01 SINGLE PULSE ...
Page 6
COIL MERCURY SWITCH DUT S 1 Figure 13. Test Circuit The unclamped inductive switching circuit shown in Figure 13 was used to demonstrate the controlled avalanche capability of this device. A mercury ...
Page 7
PACKAGE DIMENSIONS http://onsemi.com TO−220 CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. SEATING −T− 2. CONTROLLING DIMENSION: ...
Page 8
... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...