MBR30H100CTG ON Semiconductor, MBR30H100CTG Datasheet - Page 4

• Manufacturer Part Number: MBR30H100CTG
• Description: DIODE SCHOTTKY 100V 15A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR30H100CTG

• Voltage - Forward (vf) (max) @ If: 800mV @ 15A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 30 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.93 V
• Maximum Reverse Leakage Current: 4.5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
0.01
100
0.000001
0.000001
30
28
26
24
22
20
18
16
14
12
10
0.1
0.1
10
10
8
6
4
2
0
1
1
0
T
Figure 7. Forward Power Dissipation
0.05
0.01
0.05
D = 0.5
J
0.01
2
D = 0.5
0.2
0.1
0.2
0.1
= 175°C
SINGLE PULSE
4
I
F(AV)
6
0.00001
0.00001
, AVERAGE FORWARD CURRENT (AMPS)
SINGLE PULSE
8
10
Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT
Figure 10. Thermal Response Junction−to−Case for MBR30H100CT
12
14
0.0001
0.0001
16
18
SQUARE WAVE
20
0.001
0.001
22
24
dc
26
http://onsemi.com
28 30
t
t
1
1
0.01
, TIME (sec)
0.01
, TIME (sec)
4
10000
1000
100
10
0
0.1
0.1
20
V
R
, REVERSE VOLTAGE (VOLTS)
1
1
Figure 8. Capacitance
40
10
10
60
P
P
DUTY CYCLE, D = t
DUTY CYCLE, D = t
(pk)
(pk)
100
100
t
t
1
1
80
t
t
T
2
2
J
= 25°C
1
1
/t
/t
2
2
1000
1000
100