MBR10100CT-E3/45 Vishay, MBR10100CT-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBR10100CT-E3/45
• Description: DIODE SCHOTT 10A 100V DUAL TO220
• Manufacturer: Vishay

Specifications of MBR10100CT-E3/45

• Voltage - Forward (vf) (max) @ If: 850mV @ 5A
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 5 A
• Max Surge Current: 120 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.85 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 89125
Revision: 26-Apr-10
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
0.0001
Figure 3. Forward Power Loss Characteristics Per Diode
0.001
100
0.01
100
4.0
3.5
3.0
2.5
0.1
2.0
1.5
1.0
0.5
10
Figure 5. Typical Reverse Characteristics Per Diode
0.1
10
0
1
1
0
0
0
T
Percent of Rated Peak Reverse Voltage (%)
A
0.2
= 125 °C
T
D = 0.1
T
Instantaneous Forward Voltage (V)
A
1
A
T
= 150 °C
20
= 150 °C
A
Average Forward Current (A)
0.4
= 100 °C
D = 0.2
T
T
A
2
A
0.6
= 25 °C
D = 0.3
= 125 °C
40
[e-mail], [e-mail],
T
0.8
For technical questions within your region, please contact one of the following:
3
A
= 25 °C
D = 0.5
T
A
D = t
60
1.0
= 100 °C
D = 0.8
4
p
/T
1.2
80
T
5
t
D = 1.0
p
1.4
1.6
100
6
10 000
Figure 7. Typical Transient Thermal Impedance Per Diode
1000
100
0.1
10
10
Figure 6. Typical Junction Capacitance Per Diode
0.01
MBR1090CT, MBR10100CT
0.1
[e-mail]
Vishay General Semiconductor
Junction to Case
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3