RB751V-40TE-17 Rohm Semiconductor, RB751V-40TE-17 Datasheet
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Manufacturer Part Number
RB751V-40TE-17
Description
DIODE SCHOTTKY 30V 30MA SOD323
Manufacturer
Rohm Semiconductor
Specifications of RB751V-40TE-17
Voltage - Forward (vf) (max) @ If
370mV @ 1mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
30mA
Current - Reverse Leakage @ Vr
500nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.03 A
Max Surge Current
0.2 A
Configuration
Single
Forward Voltage Drop
0.37 V @ 0.001 A
Maximum Reverse Leakage Current
0.5 uA @ 30 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB751V-40TE-17TR
Available stocks
Part Number:
RB751V-40TE-17
Part Number:
RB751V-40TE-17
Part Number:
RB751V-40TE-17
Diodes
Schottky barrier diode
RB751V-40
Low current rectification
1) Ultra small mold type. (UMD2)
2) Low V
3) High reliability
Silicon epitaxial planar
R
Revers e voltage (DC)
A
F
J
S
F
Revers e current
Capacitance betw
unction tem perature
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
verage rectified forward current
orward current s urge peak （ 60Hz ・ 1cyc ）
Electrical characteristic (Ta=25°C)
torage tem perature
orward voltage
evers e voltage (repetitive peak)
F
Param eter
Param eter
een term inal
Sym bol
Sym bol
External dimensions (Unit : mm)
JEITA : SC-90/A
4.0±0.1
JEDEC : S0D-323
Taping dimensions (Unit : mm)
V
Ct
Ts tg
ROHM : UMD2
V
I
I
FSM
R
1.40±0.1
V
F
Io
Tj
RM
R
dot (year week factory)
1.25±0.1
0.3±0.05
Min.
2.0±0.05
-
-
-
-40 to +125
4.0±0.1
Lim its
Typ.
200
125
2
40
30
30
-
-
0.1±0.1
0.05
φ1.55±0.05
0.7±0.2
0.1
Max.
0.37
0.5
-
φ1.05
Unit
µA
pF
V
Unit
m A
m A
℃
℃
V
V
I
V
V
F
R
R
=1m A
=30V
=1V , f=1MHz
UMD2
Land size figure
Structure
Conditions
0.9MIN.
Rev.B
0.3±0.1
1.0±0.1
RB751V-40
1/3
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RB751V-40TE-17 Summary of contents
... Lim its Sym bol 200 I FSM 125 Tj -40 to +125 Ts tg Sym bol Min. Typ. Max 0. 0 RB751V-40 Land size figure 0.9MIN. UMD2 Structure 0.3±0.1 1.0±0.1 Unit ℃ ℃ Unit Conditions µA V =30V =1V , f=1MHz R Rev.B 1/3 ...
... NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.04 0.03 D=1/2 Sin(θ＝180) 0.02 DC 0.01 0.00 0.00 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS RB751V-40 10 f=1MHz 1 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 9 Ta=25℃ 8 f=1MHz VR=1V 7 n=10pcs AVE:1 ...
... Tj=125℃ D=1/2 0.04 0.02 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0. D=t/T VR=15V 0. Tj=125℃ 0.04 D=1/2 0.02 Sin(θ＝180) 0.00 125 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) RB751V- 125 Rev.B 3/3 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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