BAS16WT1G ON Semiconductor, BAS16WT1G Datasheet - Page 2

• Manufacturer Part Number: BAS16WT1G
• Description: DIODE SWITCH 200MA 75V SOT323
• Manufacturer: ON Semiconductor

Specifications of BAS16WT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Average Rectified (io): -
• Other names: BAS16WT1GOSTR

ELECTRICAL CHARACTERISTICS
Forward Voltage
Reverse Current
Capacitance
Reverse Recovery Time
Stored Charge
Forward Recovery Voltage
(I
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
F
F
F
F
F
F
F
R
R
R
R
= 1.0 mA)
= 10 mA)
= 50 mA)
= 150 mA)
= I
= 10 mA to V
= 10 mA, t
= 75 V)
= 75 V, T
= 25 V, T
= 0, f = 1.0 MHz)
R
= 10 mA, R
J
J
r
= 150C)
= 150C)
= 20 ns) (Figure 3)
R
= 6.0 V, R
L
= 50 Ω) (Figure 1)
Characteristic
L
= 500 Ω) (Figure 2)
(T
A
= 25C unless otherwise noted)
http://onsemi.com
2
Symbol
V
QS
C
V
I
t
FR
R
rr
F
D
Min
--
--
--
--
--
--
--
--
--
--
--
1000
1250
Max
1.75
715
866
1.0
2.0
6.0
50
30
45
Unit
mV
PC
mA
pF
ns
V