S1MA-E3/61T Vishay, S1MA-E3/61T Datasheet - Page 2

DIODE GPP 1A 1000V SMA DO-214AC

S1MA-E3/61T

Manufacturer Part Number
S1MA-E3/61T
Description
DIODE GPP 1A 1000V SMA DO-214AC
Manufacturer
Vishay
Datasheet

Specifications of S1MA-E3/61T

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.1V @ 1A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
3µA @ 1000V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1µs
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1 KV
Forward Voltage Drop
1.1 V
Recovery Time
1 us
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
3 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1A
Forward Voltage Vf Max
861mV
Reverse Recovery Time Trr Max
1µs
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
S1MA-E3/5AT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S1MA-E3/61T
Manufacturer:
Vishay Semiconductors
Quantity:
6 164
Company:
Part Number:
S1MA-E3/61T
Quantity:
70 000
S1A thru S1M
Vishay General Semiconductor
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current at
Rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
S1J-E3/61T
S1J-E3/5AT
S1JHE3/61T
S1JHE3/5AT
A
= 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Figure 1. Forward Current Derating Curve
0.2 x 0.2" (5.0 x 5.0 mm)
Thick Copper Pad Areas
Resistive or Inductive Load
(1)
(1)
20
40
Lead Temperature (°C)
UNIT WEIGHT (g)
60
(1)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.064
0.064
0.064
0.064
S1(K, M)
For technical questions within your region, please contact one of the following:
80
1.0 A
I
I
4.0 V, 1 MHz
TEST CONDITIONS
F
rr
100
= 0.5 A, I
= 0.25 A
120
T
T
S1(A - J)
REFERRED PACKAGE CODE
A
A
R
= 125 °C
140
= 25 °C
= 1.0 A,
A
= 25 °C unless otherwise noted)
160
A
= 25 °C unless otherwise noted)
61T
5AT
61T
5AT
SYMBOL
SYMBOL
R
R
V
C
I
t
θJA
θJL
R
rr
F
J
S1A
S1A
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
BASE QUANTITY
10
S1B
S1B
0
1
1800
7500
1800
7500
S1D
S1D
1.0
75
27
Number of Cycles at 60 Hz
S1(K, M)
S1G
S1G
1.1
1.8
50
12
T
8.3 ms Single Half Sine-Wave
L
13" diameter plastic tape and reel
13" diameter plastic tape and reel
= 110 °C
7" diameter plastic tape and reel
7" diameter plastic tape and reel
10
S1J
S1J
DELIVERY MODE
Document Number: 88711
S1(A - J)
S1K
S1K
Revision: 07-Apr-08
5.0
85
30
S1M
S1M
100
UNIT
UNIT
°C/W
µA
µs
pF
V

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