BYG21M-E3/TR Vishay, BYG21M-E3/TR Datasheet - Page 2

DIODE 1.5A 1000V 120NS DO-214AC

BYG21M-E3/TR

Manufacturer Part Number
BYG21M-E3/TR
Description
DIODE 1.5A 1000V 120NS DO-214AC
Manufacturer
Vishay
Datasheet

Specifications of BYG21M-E3/TR

Diode Type
Avalanche
Voltage - Forward (vf) (max) @ If
1.6V @ 1.5A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
1µA @ 1000V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
120ns
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.6 V
Recovery Time
120 ns
Forward Continuous Current
1.5 A
Max Surge Current
30 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1.5A
Forward Voltage Vf Max
1.6V
Reverse Recovery Time Trr Max
120ns
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BYG21M-E3/TR3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYG21M-E3/TR
Manufacturer:
VISHAY
Quantity:
130 000
Part Number:
BYG21M-E3/TR
Manufacturer:
VISHAY
Quantity:
310
Part Number:
BYG21M-E3/TR
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
BYG21M-E3/TR
0
Company:
Part Number:
BYG21M-E3/TR
Quantity:
1 000
Company:
Part Number:
BYG21M-E3/TR
Quantity:
1 000
BYG21K & BYG21M
Vishay General Semiconductor
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm
(3) Mounted on Al-oxide-ceramic (Al
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous
forward voltage
Maximum reverse current
Maximum reverse
recovery time
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance, junction to lead T
Typical thermal resistance, junction to ambient
ORDERING INFORMATION (Example)
PREFERRED P/N
BYG21K-E3/TR
BYG21K-E3/TR3
BYG21KHE3/TR
BYG21KHE3/TR3
A
= 25 °C unless otherwise noted)
0.001
0.01
0.1
10
1
Figure 1. Forward Current vs. Forward Voltage
0
0.5
(1)
(1)
(1)
T
J
1.0
= 150 °C
Forward Voltage (V)
T
J
1.5
= 25 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
UNIT WEIGHT (g)
For technical questions within your region, please contact one of the following:
I
I
V
I
I
F
F
F
rr
2.0
2
R
O
= 1 A
= 1.5 A
= 0.5 A, I
= 0.25 A
= V
0.064
0.064
0.064
0.064
TEST CONDITIONS
3
), 50 mm
RRM
2.5
R
L
2
= 1.0 A,
3.0
2
= const.
35 µm Cu
35 µm Cu
T
T
T
A
J
J
J
= 25 °C
= 25 °C
= 100 °C
= 25 °C unless otherwise noted)
3.5
A
PACKAGE CODE
= 25 °C unless otherwise noted)
TR3
TR3
TR
TR
SYMBOL
SYMBOL
R
R
V
I
t
θJA
θJL
R
rr
F
Figure 2. Max. Average Forward Current vs. Ambient Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
BYG21K
BYG21K
0
BASE Q’TY
R
1800
7500
1800
7500
θJA
R
θJA
= 150 K/W
25
= 125 K/W
R
Ambient Temperature (°C)
θJA
50
150
125
100
= 25 K/W
120
1.5
1.6
10
25
1
(1)
(2)
(3)
13" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
7" diameter plastic tape and reel
75
BYG21M
BYG21M
DELIVERY MODE
100
Document Number: 88961
V
Half Sine-Wave
R
= V
RRM
125
Revision: 11-Apr-08
150
UNIT
UNIT
°C/W
°C/W
µA
ns
V

Related parts for BYG21M-E3/TR