BYG21M-E3/TR Vishay, BYG21M-E3/TR Datasheet - Page 3

DIODE 1.5A 1000V 120NS DO-214AC

BYG21M-E3/TR

Manufacturer Part Number
BYG21M-E3/TR
Description
DIODE 1.5A 1000V 120NS DO-214AC
Manufacturer
Vishay
Datasheet

Specifications of BYG21M-E3/TR

Diode Type
Avalanche
Voltage - Forward (vf) (max) @ If
1.6V @ 1.5A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
1µA @ 1000V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
120ns
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.6 V
Recovery Time
120 ns
Forward Continuous Current
1.5 A
Max Surge Current
30 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1.5A
Forward Voltage Vf Max
1.6V
Reverse Recovery Time Trr Max
120ns
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BYG21M-E3/TR3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Quantity:
130 000
Part Number:
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Manufacturer:
VISHAY
Quantity:
310
Part Number:
BYG21M-E3/TR
Manufacturer:
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Quantity:
20 000
Part Number:
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0
Company:
Part Number:
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Quantity:
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Company:
Part Number:
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Quantity:
1 000
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Document Number: 88961
Revision: 11-Apr-08
120
100
100
80
60
40
20
Figure 3. Reverse Current vs. Junction Temperature
25
20
15
10
10
5
0
0
1
Figure 5. Diode Capacitance vs. Reverse Voltage
0.1
25
25
V
R
= V
50
50
RRM
Junction Temperature (°C)
Reverse Voltage (V)
1
75
75
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
P
at 80 % V
R
- Limit
100
100
10
R
V
P
at 100 % V
R
R
= V
- Limit
125
125
f = 1 MHz
RRM
R
150
150
100
Figure 6. Max. Reverse Recovery Charge vs. Forward Current
1000
100
200
150
100
50
10
0
1
10
0
-5
t
t
t
t
t
P
P
P
P
P
t
Vishay General Semiconductor
125 K/W DC
/T = 0.1
/T = 0.05
/T = 0.02
P
/T = 0.5
/T = 0.2
/T = 0.01
10
-4
0.2
Figure 7. Thermal Response
10
-3
Forward Current (A)
BYG21K & BYG21M
Pulse Length (s)
0.4
10
-2
Single Pulse
T
10
A
I
R
0.6
-1
= 125 °C
= 0.5 A, i
10
0
T
T
T
T
A
A
R
A
A
0.8
= 100 °C
= 75 °C
= 50 °C
= 25 °C
= 0.125 A
10
1
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1.0
10
2
3

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