SB340S-E3/54 Vishay, SB340S-E3/54 Datasheet - Page 3

DIODE SCHOTTKY 40V 3A AXIAL

SB340S-E3/54

Manufacturer Part Number
SB340S-E3/54
Description
DIODE SCHOTTKY 40V 3A AXIAL
Manufacturer
Vishay
Datasheet

Specifications of SB340S-E3/54

Voltage - Forward (vf) (max) @ If
500mV @ 3A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
500µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
3 A
Max Surge Current
100 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88819
Revision: 19-Oct-09
0.001
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
10
10
0.1
1
1
0
0
T
J
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
T
= 25 °C
J
0.2
= 125 °C
Instantaneous Forward Voltage (V)
20
0.4
T
0.6
J
40
= 25 °C
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
0.8
Pulse Width = 300 μs
SB320S thru SB340S
SB350S and SB360S
SB320S thru SB340S
SB350S and SB360S
60
1 % Duty Cycle
1.0
T
T
1.2
J
J
= 75 °C
= 125 °C
80
1.4
100
1.6
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
New Product
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
1000
DIA.
100
100
10
10
1
0.1
0
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
SB320S thru SB340S
SB350S and SB360S
0.1
SB320S thru SB360S
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
V
sig
f = 1.0 MHz
10
T
J
= 50 mV
= 25 °C
www.vishay.com
p-p
100
100
3

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