ESH2PD-E3/84A Vishay, ESH2PD-E3/84A Datasheet

ESH2PD-E3/84A

Manufacturer Part Number

ESH2PD-E3/84A

Description

DIODE 1A 200V DO-220AA SMP

Manufacturer

Vishay

Series

eSMP™r

Datasheet

1.ESH2PB-E385A.pdf (4 pages)

Specifications of ESH2PD-E3/84A

Voltage - Forward (vf) (max) @ If

980mV @ 2A

Voltage - Dc Reverse (vr) (max)

200V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

1µA @ 200V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

25ns

Mounting Type

Surface Mount

Package / Case

DO-220AA

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

200 V

Forward Voltage Drop

0.98 V

Recovery Time

25 ns

Forward Continuous Current

2 A

Max Surge Current

50 A

Reverse Current Ir

1 uA

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ESH2PD-E3/84A

Manufacturer:

VISHAY

Quantity:

130 000

Current page: 1 of 4
Download datasheet (108Kb)

TYPICAL APPLICATIONS

For use in secondary rectification and freewheeling for

ultrafast switching speeds of ac-to-ac and dc-to-dc

converters in high temperature conditions for both

consumer and automotive applications.

Document Number: 89016

Revision: 08-Jul-09

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

Operating junction and storage temperature range

ELECTRICAL CHARACTERISTICS (T

PARAMETER

Maximum instantaneous

forward voltage

Maximum reverse current

Maximum reverse recovery time

High Current Density Surface Mount Ultrafast Rectifiers

at I

F(AV)

RRM

max.

(1)

= 2 A

eSMP

DO-220AA (SMP)

(2)

PDD-Americas@vishay.com, PDD-Asia@vishay.com,

For technical questions within your region, please contact one of the following:

Series

Rated V

= 2 A

= 0.5 A, I

= 25 °C unless otherwise noted)

100 V, 150 V, 200 V

TEST CONDITIONS

175 °C

0.75 V

25 ns

2.0 A

= 1 A, I

= 25 °C unless otherwise noted)

= 0.25 A

SYMBOL

= 25 °C

= 125 °C

= 25 °C

= 125 °C

F(AV)

, T

FSM

RRM

STG

FEATURES

MECHANICAL DATA

Case: DO-220AA (SMP)

Molding compound meets UL 94 V-0 flammability

rating.

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

Base P/NHM3 - halogen-free and RoHS compliant,

automotive grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Glass passivated chip junction

• Ultrafast recovery times for high frequency

• Low forward voltage drop, low power loss

• Low thermal resistance

• Meets MSL level 1 per J-STD-020, LF maximum

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

• Halogen-free according to IEC 61249-2-21

• Find out more about Vishay’s Automotive Grade

SYMBOL

peak of 260 °C

accordance to WEEE 2002/96/EC

definition

Product requirements at:

www.vishay.com/applications

ESH2PB

suffix meets JESD 201 class 1A whisker test, HM3

ESH2PB, ESH2PC & ESH2PD

P2B

100

PDD-Europe@vishay.com

Vishay General Semiconductor

- 55 to + 175

ESH2PC

TYP.

0.90

0.75

12.6

0.2

P2C

150

2.0

ESH2PD

MAX.

0.98

0.82

P2D

200

1.0

www.vishay.com

UNIT

µA

°C

Related parts for ESH2PD-E3/84A

ESH2PD-E3/84A Summary of contents

Page 1

... F Document Number: 89016 For technical questions within your region, please contact one of the following: Revision: 08-Jul-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • ...

Page 2

... ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Typical reverse recovery time dI/ A/µ Typical stored charge rr Typical junction capacitance 4 MHz Notes: (1) Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER ...

Page 3

... Document Number: 89016 For technical questions within your region, please contact one of the following: Revision: 08-Jul-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, ESH2PB, ESH2PC & ESH2PD 1000 100 10 1 1.4 1.6 0 100 DO-220AA (SMP) 0 ...

Page 4

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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