ESH2PD-E3/84A Vishay, ESH2PD-E3/84A Datasheet - Page 3

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ESH2PD-E3/84A

Manufacturer Part Number
ESH2PD-E3/84A
Description
DIODE 1A 200V DO-220AA SMP
Manufacturer
Vishay
Series
eSMP™r
Datasheet

Specifications of ESH2PD-E3/84A

Voltage - Forward (vf) (max) @ If
980mV @ 2A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Surface Mount
Package / Case
DO-220AA
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.98 V
Recovery Time
25 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ESH2PD-E3/84A
Manufacturer:
VISHAY
Quantity:
130 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89016
Revision: 08-Jul-09
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
100
0.1
10
0.1
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
10
T
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
20
0.4
T
Instantaneous Forward Voltage (V)
J
0.086 (2.18)
0.074 (1.88)
= 175 °C
30
0.013 (0.35)
0.004 (0.10)
0.6
T
J
40
= 175 °C
T
J
= 25 °C
T
0.8
T
50
J
J
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
= 125 °C
For technical questions within your region, please contact one of the following:
T
J
0.012 (0.30)
0.000 (0.00)
= 150 °C
60
1.0
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
70
T
Cathode Band
J
1.2
= 25 °C
0.018 (0.45)
0.006 (0.15)
80
1.4
90
100
1.6
0.045 (1.15)
0.033 (0.85)
DO-220AA (SMP)
0.053 (1.35)
0.041 (1.05)
0.100
(2.54)
ESH2PB, ESH2PC & ESH2PD
1000
100
10
1
0.1
PDD-Europe@vishay.com
0.103 (2.60)
0.087 (2.20)
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.105
(2.67)
0.012 (0.30) REF.
Reverse Voltage (V)
1
(0.635)
0.025
(0.762)
0.030
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
10
0.050
(1.27)
www.vishay.com
100
3

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