UH3B-E3/9AT Vishay, UH3B-E3/9AT Datasheet - Page 3

• Manufacturer Part Number: UH3B-E3/9AT
• Description: DIODE 3A 100V 25NS FER DO214AB
• Manufacturer: Vishay

Specifications of UH3B-E3/9AT

• Voltage - Forward (vf) (max) @ If: 1.05V @ 3A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.05 V
• Recovery Time: 40 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89109
Revision: 03-Jun-09
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
Figure 1. Maximum Forward Current Derating Curve
0.1
10
0
0
1
0.2
0
0
Figure 2. Forward Power Loss Characteristics
T
T
at Mount of Terminal
A
M
= 125 °C
Measured
0.5
25
0.4
T
Instantaneous Forward Voltage (V)
D = 0.1
A
= 150 °C
T
Average Forward Current (A)
M
1.0
50
0.6
- Mount Temperature (°C)
T
D = 0.2
A
1.5
75
0.8
= 175 °C
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T
D = 0.3 D = 0.5
For technical questions within your region, please contact one of the following:
A
Resistive or Inductive Load
= 25 °C
T
100
2.0
A
1.0
= 100 °C
D = t
125
2.5
1.2
p
/T
D = 0.8
150
T
3.0
1.4
D = 1.0
t
p
175
3.5
1.6
New Product
1000
1000
0.01
100
100
100
0.1
10
10
10
0.001
1
1
0.1
10
Figure 6. Typical Transient Thermal Impedance
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Junction to Ambient
Vishay General Semiconductor
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
0.01
30
UH3B, UH3C & UH3D
t - Pulse Duration (s)
Reverse Voltage (V)
40
1
0.1
T
T
T
A
A
A
50
= 175 °C
= 150 °C
= 125 °C
T
T
A
A
60
= 100 °C
= 25 °C
1
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mV
80
10
90
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p-p
100
100
100
3