UH3D Vishay Siliconix, UH3D Datasheet
UH3D
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UH3D Summary of contents
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... A SYMBOL V RRM I F(AV) I FSM STG For technical questions within your region, please contact one of the following: UH3B, UH3C & UH3D Vishay General Semiconductor peak of 260 °C accordance to WEEE 2002/96/EC UH3B UH3C UH3D 100 150 200 (1) 2 ...
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... UH3B, UH3C & UH3D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER (1) Instantaneous forward voltage (2) Reverse current Maximum reverse recovery time Typical reverse recovery time Typical softness factor ( Typical reverse recovery current Typical stored charge Typical junction capacitance Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ ...
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... 2.0 2.5 3.0 3 100 ° °C A 1.0 1.2 1.4 1.6 For technical questions within your region, please contact one of the following: UH3B, UH3C & UH3D Vishay General Semiconductor 1000 T = 175 °C A 100 T = 150 ° 125 ° 100 ° 0 ° ...
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... UH3B, UH3C & UH3D Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.126 (3.20) 0.114 (2.90) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) www.vishay.com For technical questions within your region, please contact one of the following: 4 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product DO-214AB (SMC) Cathode Band 0.246 (6.22) 0.220 (5.59) ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...