SI9433DY Vishay Siliconix, SI9433DY Datasheet

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SI9433DY

Manufacturer Part Number
SI9433DY
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 70125
S-00652—Rev. J, 27-Mar-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t
DS
–20
–20
(V)
G
S
S
S
1
2
3
4
Top View
SO-8
J
J
0.045 @ V
0.070 @ V
a
a
= 150 C)
= 150 C)
a
r
DS(on)
8
7
6
5
Parameter
Parameter
GS
GS
a
a
10 sec.
( )
= –4.5 V
= –2.7 V
D
D
D
D
P-Channel 20-V (D-S) MOSFET
a
I
D
(A)
5.4
4.2
G
P-Channel MOSFET
T
T
T
T
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
D
D
S S S
D
D
Symbol
Symbol
T
R
J
V
V
I
P
P
, T
I
I
DM
thJA
I
GS
DS
D
D
S
D
D
stg
www.vishay.com FaxBack 408-970-5600
–55 to 150
Vishay Siliconix
Limit
Limit
–2.6
–20
2.5
1.6
50
5.4
4.4
12
20
Si9433DY
Unit
Unit
C/W
W
W
V
V
A
A
A
C
1

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SI9433DY Summary of contents

Page 1

... P-Channel MOSFET Symbol stg Symbol R thJA www.vishay.com FaxBack 408-970-5600 Si9433DY Vishay Siliconix Limit Unit – 5.4 4 –2.6 2 1.6 –55 to 150 C Limit Unit 50 C/W 1 ...

Page 2

... Si9433DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On-State Drain Current b b Drain-Source On-State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic ...

Page 3

... 4000 3000 2000 = 4.5 V 1000 On-Resistance vs. Junction Temperature 2.0 V 1.6 I 1.2 0.8 0 –50 –25 Si9433DY Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( ...

Page 4

... Si9433DY Vishay Siliconix Source-Drain Diode Forward Voltage T = 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A D 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...

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