RHRD660S9A Fairchild Semiconductor, RHRD660S9A Datasheet - Page 3

• Manufacturer Part Number: RHRD660S9A
• Description: DIODE HYPER 6A 600V TO-252
• Manufacturer: Fairchild Semiconductor

Specifications of RHRD660S9A

• Voltage - Forward (vf) (max) @ If: 2.1V @ 6A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 6A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.1 V
• Recovery Time: 30 ns
• Forward Continuous Current: 6 A
• Max Surge Current: 60 A
• Reverse Current Ir: 100 uA
• Power Dissipation: 50 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 3. t
FIGURE 5. t
30
25
20
15
10
75
60
45
30
15
5
0
0
0.5
0.5
rr
rr
, t
, t
a
a
AND t
AND t
1
I
1
I
F
F
, FORWARD CURRENT (A)
, FORWARD CURRENT (A)
t a
t a
b
b
CURVES vs FORWARD CURRENT
CURVES vs FORWARD CURRENT
t rr
t rr
t b
T
t b
C
T
= 175
C
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
= 25
o
50
40
30
20
10
o
C, dI
0
C, dI
0
(Continued)
F
F
/dt = 200A/µs
/dt = 200A/µs
50
V
R
6
6
, REVERSE VOLTAGE (V)
100
FIGURE 4. t
50
40
30
20
10
6
5
4
3
2
1
0
0
140
0.5
T
150
C
FIGURE 6. CURRENT DERATING CURVE
= 100
145
rr
, t
o
a
C, dI
AND t
T
150
C
F
1
200
I
/dt = 200A/µs
F
, CASE TEMPERATURE (
, FORWARD CURRENT (A)
b
CURVES vs FORWARD CURRENT
t rr
SQ. WAVE
155
t a
t b
160
DC
RHRD660, RHRD660S Rev. B
165
o
C)
170
175
6