FDMS86300DC

Manufacturer Part NumberFDMS86300DC
Description
ManufacturerFairchild Semiconductor
FDMS86300DC datasheet
 


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FDMS86300DC
N-Channel Dual Cool
80 V, 60 A, 3.1 mΩ
Features
TM
Dual Cool
Top Side Cooling PQFN package
Max r
= 3.1 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 4.0 mΩ at V
= 8 V, I
DS(on)
GS
High performance technology for extremely low r
100% UIL Tested
RoHS Compliant
S
Pin 1
Top
Power 56
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
I
D
-Continuous
-Pulsed
E
Single Pulse Avalanche Energy
AS
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
86300
FDMS86300DC
©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
TM
®
Power Trench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
= 24 A
D
Advancements in both silicon and Dual Cool
= 21 A
technologies have been combined to offer the lowest r
D
while maintaining excellent switching performance by extremely
DS(on)
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
D
D
D
D
G
S
S
Pin 1
S
Bottom
T
= 25 °C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
(Bottom Drain)
Package
Reel Size
TM
Dual Cool
Power 56
1
March 2012
®
advanced
Power
Trench
process.
TM
package
S
D
D
S
D
S
D
G
Ratings
Units
80
±20
60
148
(Note 1a)
24
150
(Note 3)
240
125
(Note 1a)
3.2
-55 to +150
(Top Source)
2.3
1.0
(Note 1a)
38
(Note 1b)
81
(Note 1i)
16
(Note 1j)
23
(Note 1k)
11
Tape Width
Quantity
13’’
12 mm
3000 units
www.fairchildsemi.com
DS(on)
V
V
A
mJ
W
°C
°C/W

FDMS86300DC Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86300 FDMS86300DC ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev ® Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

  • Page 2

    ... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

  • Page 3

    ... Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 Starting 0.3 mH ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper 2 ...

  • Page 4

    ... DUTY CYCLE = 0.5% MAX 120 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted 6 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 5 ...

  • Page 5

    ... J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted J 10000 1000 100 60 80 150 120 100 C ...

  • Page 6

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

  • Page 7

    ... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev www.fairchildsemi.com ...

  • Page 8

    ... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...