FDMS3006SDC

Manufacturer Part NumberFDMS3006SDC
Description
ManufacturerFairchild Semiconductor
FDMS3006SDC datasheet
 


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FDMS3006SDC
N-Channel Dual Cool
30 V, 49 A, 1.9 mΩ
Features
TM
Dual Cool
Top Side Cooling PQFN package
Max r
= 1.9 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 2.7 mΩ at V
= 4.5 V, I
DS(on)
GS
High performance technology for extremely low r
SyncFET Schottky Body Diode
RoHS Compliant
Top
Power 56
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
I
D
-Continuous
-Pulsed
E
Single Pulse Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
3006S
FDMS3006SDC
©2011 Fairchild Semiconductor Corporation
FDMS3006SDC Rev.C
TM
®
Power Trench
SyncFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
= 30 A
D
Advancements in both silicon and Dual Cool
= 26 A
technologies have been combined to offer the lowest r
D
while maintaining excellent switching performance by extremely
DS(on)
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
D
D
D
D
G
S
S
Pin 1
S
Bottom
T
= 25°C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
(Top Source)
(Bottom Drain)
Package
Reel Size
TM
Dual Cool
Power 56
13’’
1
August 2011
TM
®
advanced
Power
Trench
process.
TM
package
DS(on)
D
G
5
4
D
6
3
S
D
S
7
2
S
D
8
1
Ratings
Units
30
V
(Note 4)
±20
V
49
179
A
(Note 1a)
34
200
(Note 3)
144
mJ
(Note 5)
1.8
V/ns
89
W
(Note 1a)
3.3
-55 to +150
°C
2.7
1.4
(Note 1a)
38
(Note 1b)
81
°C/W
(Note 1i)
16
(Note 1j)
23
(Note 1k)
11
Tape Width
Quantity
12 mm
3000 units
www.fairchildsemi.com

FDMS3006SDC Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3006S FDMS3006SDC ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C TM ® Power Trench SyncFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

  • Page 2

    ... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C D ...

  • Page 3

    ... As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ≤ di/dt ≤ 165 A/μs, V ≤ Starting DSS ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material °C/W when mounted pad copper mH ...

  • Page 4

    ... DUTY CYCLE = 0.5% MAX 150 100 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted J PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX 1.5 2.0 2 100 125 150 125 C o ...

  • Page 5

    ... MAX RATED J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted 100 ...

  • Page 6

    ... Typical Characteristics 2 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec ...

  • Page 7

    ... TIME (ns) Figure 14. FDMS3006S SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device μ ...

  • Page 8

    ... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C 8 www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS3006SDC Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...