FDMS86101DC

Manufacturer Part NumberFDMS86101DC
Description
ManufacturerFairchild Semiconductor
FDMS86101DC datasheet
 


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FDMS86101DC
N-Channel Dual Cool
100 V, 60 A, 7.5 mΩ
Features
TM
Dual Cool
Top Side Cooling PQFN package
Max r
= 7.5 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 12 mΩ at V
= 6 V, I
DS(on)
GS
High performance technology for extremely low r
100% UIL Tested
RoHS Compliant
S
Pin 1
Top
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
I
D
-Continuous
-Pulsed
E
Single Pulse Avalanche Energy
AS
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
86101
FDMS86101DC
©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
TM
®
Power Trench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
= 14.5 A
D
Advancements in both silicon and Dual Cool
= 11.5 A
technologies have been combined to offer the lowest r
D
while maintaining excellent switching performance by extremely
DS(on)
low Junction-to-Ambient thermal resistance.
Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
D
D
D
D
G
S
S
Pin 1
S
Power 56
Bottom
T
= 25 °C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
Package
TM
Dual Cool
Power 56
1
February 2012
®
advanced
Power
Trench
TM
S
D
D
S
D
S
D
G
Ratings
100
±20
60
88
(Note 1a)
14.5
200
(Note 3)
216
125
(Note 1a)
3.2
-55 to +150
(Top Source)
2.3
(Bottom Drain)
1.0
(Note 1a)
38
(Note 1b)
81
(Note 1i)
16
(Note 1j)
23
(Note 1k)
11
Reel Size
Tape Width
Quantity
13’’
12 mm
3000 units
www.fairchildsemi.com
process.
package
DS(on)
Units
V
V
A
mJ
W
°C
°C/W

FDMS86101DC Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86101 FDMS86101DC ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev ® Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool = 11 ...

  • Page 2

    ... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25° ...

  • Page 3

    ... Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 Starting N-ch 0.3 mH ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper 2 ...

  • Page 4

    ... V DS 100 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev °C unless otherwise noted μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 125 150 ...

  • Page 5

    ... C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev °C unless otherwise noted J 5000 1000 = 100 125 ...

  • Page 6

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

  • Page 7

    ... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev www.fairchildsemi.com ...

  • Page 8

    ... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS86101DC Rev. C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...