FDMS8570S
N-Channel PowerTrench
25 V, 60 A, 2.8 mΩ
Features
Max r
= 2.8 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 3.3 mΩ at V
= 4.5 V, I
DS(on)
GS
High performance technology for extremely low r
TM
SyncFET
Schottky Body Diode
RoHS Compliant
Top
Power 56
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current
-Continuous (Package limited)
I
-Continuous
D
-Pulsed
E
Single Pulse Avalanche Energy
AS
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
10OD
FDMS8570S
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
®
TM
SyncFET
General Description
= 24 A
This N-Channel SyncFET
D
Semiconductor’s
= 22 A
D
Advancements in both silicon and package technologies have
been combined to offer the lowest r
DS(on)
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Bottom
Pin 1
S
S
S
G
D
D
D
D
T
= 25°C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
Package
Reel Size
Power 56
1
April 2012
TM
is produced using Fairchild
®
advanced
PowerTrench
process.
while maintaining
DS(on)
D
G
5
4
D
6
3
S
D
S
7
2
S
D
8
1
Ratings
25
12
60
(Note 1a)
24
100
(Note 3)
45
48
(Note 1a)
2.5
-55 to +150
2.6
(Note 1a)
50
Tape Width
Quantity
13’’
12 mm
3000 units
www.fairchildsemi.com
Units
V
V
A
mJ
W
°C
°C/W