FDMS8570S Fairchild Semiconductor, FDMS8570S Datasheet

FDMS8570S
Manufacturer Part Number	FDMS8570S
Description
Manufacturer	Fairchild Semiconductor
FDMS8570S datasheet	1. FDMS8570S.pdf (8 pages)

Page 1/8

Download datasheet (300Kb)Embed

Prev Next

FDMS8570S

N-Channel PowerTrench

25 V, 60 A, 2.8 mΩ

Features

Max r

= 2.8 mΩ at V

= 10 V, I

DS(on)

Max r

= 3.3 mΩ at V

= 4.5 V, I

DS(on)

High performance technology for extremely low r

SyncFET

Schottky Body Diode

RoHS Compliant

Top

Power 56

MOSFET Maximum Ratings

Symbol

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous (Package limited)

-Continuous

-Pulsed

Single Pulse Avalanche Energy

Power Dissipation

, T

Operating and Storage Junction Temperature Range

STG

Thermal Characteristics

Thermal Resistance, Junction to Case

θJC

Thermal Resistance, Junction to Ambient

θJA

Package Marking and Ordering Information

Device Marking

Device

10OD

FDMS8570S

FDMS8570S Rev.D1

SyncFET

General Description

= 24 A

This N-Channel SyncFET

Semiconductor’s

= 22 A

Advancements in both silicon and package technologies have

been combined to offer the lowest r

DS(on)

excellent switching performance by extremely low Junction-to-

Ambient thermal resistance. This device has the added benefit

of an efficient monolithic Schottky body diode.

Applications

Synchronous Rectifier for DC/DC Converters

Telecom Secondary Side Rectification

High End Server/Workstation Vcore Low Side

Bottom

Pin 1

= 25°C unless otherwise noted

Parameter

= 25 °C

Package

Reel Size

Power 56

April 2012

is produced using Fairchild

advanced

PowerTrench

process.

while maintaining

DS(on)

Ratings

(Note 1a)

100

(Note 3)

(Note 1a)

2.5

-55 to +150

2.6

(Note 1a)

Tape Width

Quantity

13’’

12 mm

3000 units

www.fairchildsemi.com

Units

°C

°C/W

Download datasheet (300Kb)

FDMS8570S Summary of contents
Page 1 ... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 10OD FDMS8570S ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D1 ® TM SyncFET General Description = 24 A This N-Channel SyncFET D Semiconductor’ Advancements in both silicon and package technologies have ... Page 2 ... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C ... Page 3 ... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted 2 μ s 0.9 1.2 1 100 125 150 ... Page 4 ... MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted J 10000 100 ... Page 5 ... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION ( NOTES: ... Page 6 ... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8570S ... Page 7 ... L C PKG PIN #1 1 IDENT MAY TOP VIEW APPEAR AS OPTIONAL SIDE VIEW 1.27 (0.39) 1 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 8 BOTTOM VIEW 0.10 C 0.08 C 1.10 0.90 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D1 5.10 A 4.90 PKG 0.77 4.52 3.75 6.25 5.90 1.27 4 1.27 SEE DETAIL A 3.81 0.46 (8X) 0.36 0. (0.50) 4.29 (1.81) 4 ... Page 8 ... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

FDMS8570S Summary of contents

Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 10OD FDMS8570S ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D1 ® TM SyncFET General Description = 24 A This N-Channel SyncFET D Semiconductor’ Advancements in both silicon and package technologies have ...
Page 2
... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° based on starting ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C ...
Page 3
... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted 2 μ s 0.9 1.2 1 100 125 150 ...
Page 4
... MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted J 10000 100 ...
Page 5
... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION ( NOTES: ...
Page 6
... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8570S ...
Page 7
... L C PKG PIN #1 1 IDENT MAY TOP VIEW APPEAR AS OPTIONAL SIDE VIEW 1.27 (0.39) 1 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 8 BOTTOM VIEW 0.10 C 0.08 C 1.10 0.90 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D1 5.10 A 4.90 PKG 0.77 4.52 3.75 6.25 5.90 1.27 4 1.27 SEE DETAIL A 3.81 0.46 (8X) 0.36 0. (0.50) 4.29 (1.81) 4 ...
Page 8
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS8570S Rev.D1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

FDMS8570S

FDMS8570S

FDMS8570S Summary of contents

Related keywords: