FDD86113LZ

Manufacturer Part NumberFDD86113LZ
Description
ManufacturerFairchild Semiconductor
FDD86113LZ datasheet
 


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FDD86113LZ
N-Channel PowerTrench
100 V, 5.5 A, 104 mΩ
Features
Max r
= 104 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 156 mΩ at V
= 4.5 V, I
DS(on)
GS
HBM ESD protection level > 6 kV typical (Note 4)
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
G
S
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current
-Continuous(Package limited)
-Continuous (Silicon limited)
I
D
-Continuous
-Pulsed
E
Single Pulse Avalanche Energy
AS
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
FDD86113LZ
FDD86113LZ
©2011 Fairchild Semiconductor Corporation
FDD86113LZ Rev. C
®
MOSFET
General Description
= 4.2 A
This N-Channel logic Level MOSFETs are produced using
D
Fairchild Semiconductor‘s advanced Power Trench
= 3.4 A
that has been special tailored to minimize the on-state resistance
D
and yet maintain superior switching performance. G-S zener has
been added to enhance ESD voltage level.
DS(on)
Application
DC-DC conversion
D
D -P A K
T O -2 52
(T O -252)
T
= 25 °C unless otherwise noted
C
Parameter
T
C
T
C
T
A
T
= 25 °C
C
T
= 25 °C
A
Package
D-PAK(TO-252)
1
December 2011
D
G
S
Ratings
100
±20
= 25 °C
5.5
= 25 °C
11.8
= 25 °C (Note 1a)
4.2
15
(Note 3)
12
29
(Note 1a)
3.1
-55 to +150
(Note 1)
4.3
(Note 1a)
9
Reel Size
Tape Width
13 ’’
12 mm
www.fairchildsemi.com
process
®
Units
V
V
A
mJ
W
°C
°C/W
Quantity
2500 units

FDD86113LZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86113LZ FDD86113LZ ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. C ® MOSFET General Description = 4.2 A This N-Channel logic Level MOSFETs are produced using D Fairchild Semiconductor‘s advanced Power Trench = 3.4 A that has been special tailored to minimize the on-state resistance D and yet maintain superior switching performance ...

  • Page 2

    ... Starting ° mH The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

  • Page 3

    ... 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted 3 μ 2 400 300 200 100 50 75 ...

  • Page 4

    ... V GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted J 1000 100 ...

  • Page 5

    ... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0. Figure 14. ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 4.3 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Case Transient Thermal Response Curve ...

  • Page 6

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...