FDMS86500DC

Manufacturer Part NumberFDMS86500DC
Description
ManufacturerFairchild Semiconductor
FDMS86500DC datasheet
 


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FDMS86500DC
N-Channel Dual Cool
60 V, 60 A, 2.3 mΩ
Features
TM
Dual Cool
Top Side Cooling PQFN package
Max r
= 2.3 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 3.3 mΩ at V
= 8 V, I
DS(on)
GS
High performance technology for extremely low r
100% UIL Tested
RoHS Compliant
S
Pin 1
Top
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
I
D
-Continuous
-Pulsed
E
Single Pulse Avalanche Energy
AS
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
86500
FDMS86500DC
©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C
TM
®
Power Trench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
= 29 A
D
Advancements in both silicon and Dual Cool
= 24 A
technologies have been combined to offer the lowest r
D
while maintaining excellent switching performance by extremely
DS(on)
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
D
D
D
D
G
S
S
Pin 1
S
Power 56
Bottom
T
= 25 °C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
Package
TM
Dual Cool
Power 56
1
December 2011
®
advanced
Power
Trench
TM
S
S
S
G
Ratings
60
±20
60
177
(Note 1a)
29
200
(Note 3)
317
125
(Note 1a)
3.2
-55 to +150
(Top Source)
2.8
(Bottom Drain)
1.0
(Note 1a)
38
(Note 1b)
81
(Note 1i)
16
(Note 1j)
23
(Note 1k)
11
Reel Size
Tape Width
Quantity
13’’
12 mm
3000 units
www.fairchildsemi.com
process.
package
DS(on)
D
D
D
D
Units
V
V
A
mJ
W
°C
°C/W

FDMS86500DC Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86500 FDMS86500DC ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev ® Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

  • Page 2

    ... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25° ...

  • Page 3

    ... Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 Starting N-ch 0.3 mH ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper 2 ...

  • Page 4

    ... DUTY CYCLE = 0.5% MAX 150 100 T = 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted 6 μ 100 125 150 ...

  • Page 5

    ... C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted J 10000 1000 100 60 80 180 150 o C 120 100 ...

  • Page 6

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

  • Page 7

    ... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev www.fairchildsemi.com ...

  • Page 8

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86500DC Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...