FDMS8558S

Manufacturer Part NumberFDMS8558S
Description
ManufacturerFairchild Semiconductor
FDMS8558S datasheet
 
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FDMS8558S
N-Channel PowerTrench
25 V, 90 A, 1.5 mΩ
Features
Max r
= 1.5 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 1.7 mΩ at V
= 4.5 V, I
DS(on)
GS
High performance technology for extremely low r
TM
SyncFET
Schottky Body Diode
RoHS Compliant
Top
Power 56
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current
-Continuous (Package limited)
I
-Continuous
D
-Pulsed
E
Single Pulse Avalanche Energy
AS
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
09OD
FDMS8558S
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
®
TM
SyncFET
General Description
= 33 A
This N-Channel SyncFET
D
Semiconductor’s
= 31 A
D
Advancements in both silicon and package technologies have
been combined to offer the lowest r
DS(on)
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Bottom
Pin 1
S
S
S
G
D
D
D
D
T
= 25°C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
Package
Reel Size
Power 56
1
April 2012
TM
is produced using Fairchild
®
advanced
PowerTrench
process.
while maintaining
DS(on)
D
G
5
4
D
6
3
S
D
S
7
2
S
D
8
1
Ratings
25
12
90
(Note 1a)
33
140
(Note 3)
145
78
(Note 1a)
2.5
-55 to +150
1.6
(Note 1a)
50
Tape Width
Quantity
13’’
12 mm
3000 units
www.fairchildsemi.com
Units
V
V
A
mJ
W
°C
°C/W

FDMS8558S Summary of contents

  • Page 1

    ... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 09OD FDMS8558S ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 ® TM SyncFET General Description = 33 A This N-Channel SyncFET D Semiconductor’ Advancements in both silicon and package technologies have ...

  • Page 2

    ... FR-4 board using a specified pad copper as shown below. R θJA by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 145 mJ is based on starting ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...

  • Page 3

    ... 100 125 1.2 1.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted 2 μ s 0.6 0.8 Figure 100 125 150 200 100 ...

  • Page 4

    ... MAX RATED J 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted J 10000 1000 100 ...

  • Page 5

    ... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION ( NOTES: ...

  • Page 6

    ... SyncFET Schottky body diode Characteristics TM Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8558S ...

  • Page 7

    ... Dimensional Outline and Pad Layout PKG PIN #1 1 IDENT MAY APPEAR AS OPTIONAL SIDE VIEW 1.27 (0.39) 1 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 8 BOTTOM VIEW 0.10 C 0.08 C 1.10 0.90 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 5.10 A 4.90 PKG 0.77 4.52 3.75 6.25 5.90 1.27 4 TOP VIEW 1.27 SEE DETAIL A 3.81 0.46 (8X) 0.36 0. (0.50) 4 ...

  • Page 8

    ... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS8558S Rev.D1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...