FDMS3016DC

Manufacturer Part NumberFDMS3016DC
Description
ManufacturerFairchild Semiconductor
FDMS3016DC datasheet
 


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FDMS3016DC
N-Channel Dual Cool
30 V, 49 A, 6.0 mΩ
Features
TM
Dual Cool
Top Side Cooling PQFN package
Max r
= 6.0 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 9.0 mΩ at V
= 4.5 V, I
DS(on)
GS
High performance technology for extremely low r
RoHS Compliant
Top
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
I
D
-Continuous
-Pulsed
E
Single Pulse Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
3016
FDMS3016DC
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
TM
®
PowerTrench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
= 12 A
D
Advancements in both silicon and Dual Cool
= 10 A
technologies have been combined to offer the lowest r
D
while maintaining excellent switching performance by extremely
DS(on)
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
Pin 1
S
S
S
G
D
D
D
D
Power 56
Bottom
T
= 25°C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
Package
TM
Dual Cool
Power 56
1
July 2010
®
advanced
PowerTrench
TM
4
D
5
D
6
3
D
7
2
D
8
1
Ratings
30
±20
49
78
(Note 1a)
18
200
(Note 3)
72
(Note 4)
1.3
60
(Note 1a)
3.3
-55 to +150
(Top Source)
5.7
(Bottom Drain)
2.1
(Note 1a)
38
(Note 1b)
81
(Note 1i)
16
(Note 1j)
23
(Note 1k)
11
Reel Size
Tape Width
13’’
12 mm
3000 units
www.fairchildsemi.com
process.
package
DS(on)
G
S
S
S
Units
V
V
A
mJ
V/ns
W
°C
°C/W
Quantity

FDMS3016DC Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3016 FDMS3016DC ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C TM ® PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

  • Page 2

    ... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

  • Page 3

    ... mH ≤ di/dt ≤ 100 A/μs, V ≤ Starting DSS ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper 2 pad copper 2 pad copper ...

  • Page 4

    ... DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev 25°C unless otherwise noted 3. 100 125 150 ...

  • Page 5

    ... MAX RATED J 0. C/W θ 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev 25°C unless otherwise noted J 3000 1000 V = 15V 20V DD 100 ...

  • Page 6

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev 25°C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec ...

  • Page 7

    ... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 4 www.fairchildsemi.com ...

  • Page 8

    ... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...