FDMS3008SDC

Manufacturer Part NumberFDMS3008SDC
Description
ManufacturerFairchild Semiconductor
FDMS3008SDC datasheet
 
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FDMS3008SDC
N-Channel Dual Cool
30 V, 49 A, 2.6 mΩ
Features
TM
Dual Cool
Top Side Cooling PQFN package
Max r
= 2.6 mΩ at V
= 10 V, I
DS(on)
GS
Max r
= 3.3 mΩ at V
= 4.5 V, I
DS(on)
GS
High performance technology for extremely low r
SyncFET Schottky Body Diode
RoHS Compliant
Top
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
I
D
-Continuous
-Pulsed
E
Single Pulse Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
P
D
Power Dissipation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
3008S
FDMS3008SDC
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
TM
®
PowerTrench
SyncFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
= 28 A
Advancements in both silicon and Dual Cool
D
technologies have been combined to offer the lowest r
= 22 A
D
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
DS(on)
added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D
D
D
D
Power 56
Bottom
T
= 25°C unless otherwise noted
A
Parameter
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
A
T
= 25 °C
C
T
= 25 °C
A
Package
TM
Dual Cool
Power 56
1
August 2011
TM
®
advanced
PowerTrench
TM
D
5
4
D
6
3
D
7
2
D
8
1
Ratings
30
(Note 4)
±20
49
140
(Note 1a)
29
200
(Note 3)
112
(Note 5)
2.3
78
(Note 1a)
3.3
-55 to +150
(Top Source)
3.5
(Bottom Drain)
1.6
(Note 1a)
38
(Note 1b)
81
(Note 1i)
16
(Note 1j)
23
(Note 1k)
11
Reel Size
Tape Width
Quantity
13’’
12 mm
3000 units
www.fairchildsemi.com
process.
package
DS(on)
G
S
S
S
Units
V
V
A
mJ
V/ns
W
°C
°C/W

FDMS3008SDC Summary of contents

  • Page 1

    ... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3008S FDMS3008SDC ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C TM ® PowerTrench SyncFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

  • Page 2

    ... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source-Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J Test Conditions mA mA, referenced to 25°C D ...

  • Page 3

    ... As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ≤ di/dt ≤ 210 A/μs, V ≤ Starting DSS ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper ...

  • Page 4

    ... DUTY CYCLE = 0.5% MAX 150 125 J 100 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J μ s 1.5 2 100 125 150 200 100 0.1 0. -55 ...

  • Page 5

    ... J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J 5000 = 15 V 1000 100 150 120 100 ...

  • Page 6

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

  • Page 7

    ... TIME (ns) Figure 14. FDMS3008SDC SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. 0.01 0.001 μ ...

  • Page 8

    ... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 8 www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...