MBR10H50-E3/45 Vishay, MBR10H50-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBR10H50-E3/45
• Description: DIODE SCHOTT 10A 45V SGL TO220-2
• Manufacturer: Vishay

Specifications of MBR10H50-E3/45

• Voltage - Forward (vf) (max) @ If: 710mV @ 10A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Fused Center, TO-220AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 10 A
• Max Surge Current: 150 A
• Configuration: Single
• Forward Voltage Drop: 0.85 V at 20 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88780
Revision: 19-May-08
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
175
150
125
100
100
0.1
15
10
75
50
25
10
5
0
1
0
1
0
T
Figure 1. Forward Current Derating Curve
J
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
= 150 °C
25
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
50
Case Temperature (°C)
75
T
8.3 ms Single Half Sine-Wave
[e-mail], [e-mail], [e-mail]
J
T
For technical questions within your region, please contact one of the following:
= T
10
J
= 125 °C
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
J
100
max.
T
J
= 25 °C
MBRF
125
MBR, MBRB
150
175
100
MBR(F,B)10H35 thru MBR(F,B)10H60
10 000
0.0001
0.001
1000
0.01
100
100
0.1
0.1
10
10
1
1
0.01
Figure 6. Typical Transient Thermal Impedance
0
0
T
f = 1.0 MHz
V
Vishay General Semiconductor
Figure 4. Typical Reverse Characteristics
J
sig
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
T
= 25 °C
J
= 50 mVp-p
= 150 °C
T
J
20
= 25 °C
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
MBR10H50 - MBR10H60
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
40
MBR10H35 - MBR10H45
MBR10H50 - MBR10H60
T
60
J
= 125 °C
10
1
80
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100
100
10
3