VF20120S-E3/4W Vishay, VF20120S-E3/4W Datasheet - Page 3

• Manufacturer Part Number: VF20120S-E3/4W
• Description: DIODE SCHOTTKY 20A 120V TO220-3
• Manufacturer: Vishay

Specifications of VF20120S-E3/4W

• Voltage - Forward (vf) (max) @ If: 1.12V @ 20A
• Voltage - Dc Reverse (vr) (max): 120V
• Current - Average Rectified (io): 20A
• Current - Reverse Leakage @ Vr: 300µA @ 120V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads, Isolated), ITO-220AB
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 120 V
• Forward Continuous Current: 20 A
• Max Surge Current: 200 A
• Configuration: Single Dual Anode
• Forward Voltage Drop: 1.03 V
• Maximum Reverse Leakage Current: 300 uA
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88993
Revision: 25-Jun-09
10 000
0.001
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
100
0.1
0.1
10
10
10
1
1
0.1
10
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
T
20
0.2
A
= 125 °C
Instantaneous Forward Voltage (V)
30
0.4
T
A
T
= 150 °C
A
Reverse Voltage (V)
40
= 150 °C
1
T
A
0.6
= 25 °C
T
T
T
A
A
A
50
= 125 °C
= 100 °C
= 25 °C
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0.8
For technical questions within your region, please contact one of the following:
T
A
60
= 100 °C
1.0
70
10
T
f = 1.0 MHz
V
J
sig
1.2
= 25 °C
80
= 50 mVp-p
1.4
V20120S, VF20120S, VB20120S & VI20120S
90
100
100
1.6
New Product
0.1
0.1
10
10
1
1
0.01
0.01
Figure 6. Typical Transient Thermal Impedance
Figure 7. Typical Transient Thermal Impedance
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Vishay General Semiconductor
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
Junction to Case
V(B,I)20120S
10
10
VF20120S
www.vishay.com
100
100
3