RB160A90T-32 Rohm Semiconductor, RB160A90T-32 Datasheet - Page 2

• Manufacturer Part Number: RB160A90T-32
• Description: DIODE SCHOTTKY 90V 1A AXIAL MSR
• Manufacturer: Rohm Semiconductor

Specifications of RB160A90T-32

• Voltage - Forward (vf) (max) @ If: 730mV @ 1A
• Voltage - Dc Reverse (vr) (max): 90V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

Diodes
Electrical characteristic curves (Ta=25°C)
0.001
200
150
100
0.01
150
100
50
650
640
630
620
610
600
0.1
50
0
0
1
0.1
0
Ta=150℃
Ta=125℃
100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=75℃
200
VF DISPERSION MAP
IFSM DISRESION MAP
1
AVE:632.1mV
TIME:t(ms)
300
AVE:56.0A
400
Ifsm
Ifsm
10
500
Ta=-25℃
8.3ms
Ta=25℃
Ta=25℃
n=30pcs
IF=1A
t
600
1cyc
100
700
1000
10000
100
100
1000
30
25
20
15
10
10
90
80
70
60
50
40
30
20
10
0.01
5
0
1
100
0.001
0
0.1
10
1
IM=1mA
Mounted on epoxy board
0
IF=0.5A
0.01
10 20
td=300us
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
time(ms)
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:4.655uA
AVE:7.40ns
30 40
AVE:478.3nA
σ:36.1612nA
TIME:t(s)
1
Ta=150℃ Ta=125℃
50 60
Rth(j-l)
10
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
70 80
Ta=25℃
n=30pcs
VR=90V
Ta=-25℃
Ta=75℃
Ta=25℃
VR=100V
Rth(j-a)
Ta=25℃
n=30pcs
Rth(j-c)
100
90
1000
200
190
180
170
160
150
140
130
120
110
100
100
1000
50
100
1.5
0.5
0
10
2
1
0
1
1
0
0
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
FORWARD CURRENT：Io(A)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Io-Pf CHARACTERISTICS
5
AVERAGE RECTIFIED
Ct DISPERSION MAP
NUMBER OF CYCLES
0.5
10
AVE:149.6pF
Ifsm
Rev.D
15
10
RB160A90
1
D=1/2
20
8.3ms
条件：f=1MHz
1cyc
f=1MHz
1.5
Ta=25℃
f=1MHz
VR=0V
n=10pcs
25
8.3ms
DC
30
100
2/3
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