DSAI75-18B

Manufacturer Part NumberDSAI75-18B
DescriptionDIODE CATH 1800V 110A DO-203AB
ManufacturerIXYS
DSAI75-18B datasheet
 


Specifications of DSAI75-18B

Voltage - Forward (vf) (max) @ If1.17V @ 150AVoltage - Dc Reverse (vr) (max)1800V (1.8kV)
Current - Average Rectified (io)110ACurrent - Reverse Leakage @ Vr6mA @ 1800V
Diode TypeAvalancheSpeedStandard Recovery >500ns, > 200mA (Io)
Mounting TypeChassis, Stud MountPackage / CaseDO-203AB, DO-5, Stud
Vrrm, (v)1800Ifavm, Total, (a)110
Ifavm, Per Diode, (a)110@ Tc, (°c)100
Prsm, (kw)20Ifrms, (a)160
Ifsm, 10 Ms, Tvj = 45°c, (a)1400Vt0, (v)0.75
Rt, (mohms)2Tvjm, (°c)180
Rthjc, Max, (k/w)0.5Rthch, (k/w)0.3
Package StyleDO-203AB (DO-5)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Reverse Recovery Time (trr)-Capacitance @ Vr, F-
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Rectifier Diode
Avalanche Diode
V
V
V
Anode
ÿ
RSM
(BR)min
RRM
V
V
V
on stud
900
-
800
DS 75-08B
1300
-
1200
DS 75-12B
1300
1300
1200
DSA 75-12B
1700
1760
1600
DSA 75-16B
1900
1950
1800
DSA 75-18B
Only for Avalanche Diodes
Symbol
Test Conditions
I
T
= T
F(RMS)
VJ
VJM
I
T
= 100°C; 180° sine
F(AV)M
case
P
DSA(I) types, T
= T
RSM
VJ
VJM
I
T
= 45°C;
t = 10 ms (50 Hz), sine
FSM
VJ
V
= 0
t = 8.3 ms (60 Hz), sine
R
T
= T
t = 10 ms (50 Hz), sine
VJ
VJM
V
= 0
t = 8.3 ms (60 Hz), sine
R
I
2
t
T
= 45°C
t = 10 ms (50 Hz), sine
VJ
V
= 0
t = 8.3 ms (60 Hz), sine
R
T
= T
t = 10 ms (50 Hz), sine
VJ
VJM
V
= 0
t = 8.3 ms (60 Hz), sine
R
T
VJ
T
VJM
T
stg
M
Mounting torque
d
Weight
Symbol
Test Conditions
I
T
= T
; V
= V
R
VJ
VJM
R
RRM
V
I
= 150 A; T
= 25°C
F
F
VJ
V
For power-loss calculations only
T0
r
T
= T
T
VJ
VJM
R
DC current
thJC
R
DC current
thJH
d
Creepage distance on surface
S
d
Strike distance through air
A
a
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Cathode
on stud
DSI 75-08B
DSI 75-12B
DSAI 75-12B
DSAI 75-16B
DSAI 75-18B
Maximum Ratings
160
110
= 10 ms
, t
20
p
1400
1500
1250
1310
9800
9450
7820
7210
-40...+180
180
-40...+180
2.4-4.5
21-40
21
Characteristic Values
£
6
£
1.17
0.75
2
0.5
0.9
4.05
3.9
100
DS 75
DSI 75
DSA 75
DSAI 75
V
= 800-1800 V
RRM
I
= 160 A
F(RMS)
I
= 110 A
F(AV)M
DO-203 AB
C
A
DS
DSA
A
C
1/4-28UNF
A = Anode
C = Cathode
A
Features
A
International standard package,
kW
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
A
A
Applications
A
High power rectifiers
A
Field supply for DC motors
Power supplies
A
2
s
2
A
s
Advantages
2
A
s
Space and weight savings
A
2
s
Simple mounting
°C
Improved temperature and power
°C
cycling
°C
Reduced protection circuits
Nm
Dimensions in mm (1 mm = 0.0394")
lb.in.
g
mA
V
V
mW
K/W
K/W
mm
mm
m/s
2
DSI
DSAI
744
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DSAI75-18B Summary of contents

  • Page 1

    ... Creepage distance on surface S d Strike distance through air A a Max. allowable acceleration Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved Cathode on stud DSI 75-08B DSI 75-12B DSAI 75-12B DSAI 75-16B ...

  • Page 2

    ... I F(AV)M Fig. 4 Power dissipation versus forward current and ambient temperature 1.5 K/W Z thJH 1.0 0.5 0 Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 1500 50Hz, 80%V RRM A I FSM T = 45°C 1000 VJ 500 T = 180° ...