IXGR24N120C3D1 IXYS, IXGR24N120C3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGR24N120C3D1
• Description: IGBT PT 1200V 48A DIO ISOPLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGR24N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 20A
• Current - Collector (ic) (max): 48A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 110
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (°c/w): 1
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: ISOPLUS 247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
5
0.5
0.5
6
Fig. 5. Collector-to-Emitter Voltage
1.0
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
1.5
1.5
8
2.0
2.0
V
V
V
I
9
CE
CE
GE
C
@ 125ºC
@ 25ºC
2.5
2.5
= 48A
- Volts
- Volts
- Volts
12A
24A
10
3.0
3.0
11
V
GE
3.5
3.5
V
GE
= 15V
12
13V
11V
= 15V
4.0
4.0
13V
11V
T
J
13
= 25ºC
4.5
4.5
9V
7V
5V
9V
5V
7V
14
5.0
5.0
5.5
5.5
15
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
60
55
50
45
40
35
30
25
20
15
10
0
5
0
-50
4.0
0
V
2
GE
4.5
Fig. 2. Extended Output Characteristics
-25
= 15V
4
Fig. 4. Dependence of V
5.0
6
0
Fig. 6. Input Admittance
Junction Temperature
5.5
T
V
8
GE
J
- Degrees Centigrade
25
10
= 15V
6.0
V
V
CE
GE
@ 25ºC
IXGR24N120C3D1
12
- Volts
- Volts
13V
6.5
11V
50
9V
7V
I
14
I
I
C
C
C
= 48A
T
= 24A
= 12A
J
7.0
16
75
= - 40ºC
125ºC
25ºC
18
CE(sat)
7.5
100
20
8.0
on
22
125
8.5
24
150
9.0
26