IXGR24N120C3D1 IXYS, IXGR24N120C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGR24N120C3D1
• Description: IGBT PT 1200V 48A DIO ISOPLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGR24N120C3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 20A
• Current - Collector (ic) (max): 48A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 110
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (°c/w): 1
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: ISOPLUS 247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
10.00
100
1.00
0.10
0.01
26
24
22
20
18
16
14
12
10
10
8
6
4
2
0
0.0001
0
0
f
= 1 MHz
10
5
Fig. 7. Transconductance
20
10
Fig. 9. Capacitance
30
I
15
C
- Amperes
V
0.001
CE
40
- Volts
20
50
25
Fig. 11. Maximum Transient Thermal Impedance
C oes
C ies
C res
T
J
60
30
= - 40ºC
125ºC
25ºC
70
35
0.01
Pulse Width - Seconds
80
40
55
50
45
40
35
30
25
20
15
10
16
14
12
10
5
0
8
6
4
2
0
200
0
T
R
dV / dt < 10V / ns
Fig. 10. Reverse-Bias Safe Operating Area
J
V
I
I
G
C
G
0.1
CE
= 125ºC
= 5 Ω
10
= 24A
= 10mA
= 600V
400
20
Fig. 8. Gate Charge
600
Q
30
G
V
- NanoCoulombs
CE
IXGR24N120C3D1
- Volts
800
40
1
IXYS REF: G_24N120C3D1(4N)02-19-08
50
1000
60
1200
70
1400
10
80