IXGH30N60C3C1 IXYS, IXGH30N60C3C1 Datasheet

IGBT C3 30A 600V TO-247

IXGH30N60C3C1

Manufacturer Part Number
IXGH30N60C3C1
Description
IGBT C3 30A 600V TO-247
Manufacturer
IXYS
Series
GenX3SC™r
Datasheet

Specifications of IXGH30N60C3C1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 20A
Current - Collector (ic) (max)
60A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
47
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.33
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
13
Rthjc, Max, Diode, (ºc/w)
1.1
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Speed PT IGBTs for
40 - 100kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
GenX3
w/ SiC Anti-Parallel
Diode
C25
C110
F110
CM
CES
GES
J
JM
stg
L
CES
CGR
GES
GEM
C
SOLD
GE(th)
CE(sat)
d
J
= 25°C Unless Otherwise Specified)
Test Conditions
TM
V
V
I
I
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
TO-263
TO-220
TO-247
Mounting Torque (TO-220 & TO-247)
C
C
CE
CE
C
J
C
C
C
C
C
GE
= 20A, V
= 250μA, V
= 25°C to 150°C, R
= 25°C
= 25°C to 150°C
= 110°C
= 110°C
= 25°C
= 25°C, 1ms
600V IGBT
= 0V, V
= V
= 15V, T
CES
, V
GE
GE
GE
VJ
= 15V, Note 1
CE
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1MΩ
G
= 5Ω
Preliminary Technical Information
T
T
J
J
= 125°C
= 125°C
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
-55 ... +150
-55 ... +150
Min.
3.5
I
@ ≤ V
CM
Characteristic Values
1.13/10
Maximum Ratings
= 60
± 20
± 30
600
600
150
150
220
300
260
60
30
13
2.5
3.0
6.0
CES
Typ.
1.8
2.6
±100 nA
Nm/lb.in.
5.5
300 μA
25 μA
3.0
Max.
°C
°C
°C
°C
°C
W
V
V
A
A
g
V
V
V
V
V
A
A
A
g
g
V
I
V
t
TO-263 (IXGA)
TO-220 (IXGP)
TO-247 (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
C
G
E
E
E
≤ ≤ ≤ ≤ ≤ 3.0V
= 600V
= 47ns
= 30A
C
TAB = Collector
C (TAB)
C (TAB)
C (TAB)
= Collector
DS100142A(06/09)

Related parts for IXGH30N60C3C1

IXGH30N60C3C1 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 20A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Maximum Ratings 600 600 ± 20 ± 150 = 5Ω ≤ V CES 220 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. ...

Page 2

... Characteristic Values Min. Typ. Max. 1.65 2. 125°C 1.80 J 1.10 °C/W (Clamp 5,049,961 5,237,481 6,162,665 6,404,065 B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXGH30N60C3C1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ...

Page 3

... .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 IXGH30N60C3C1 ...

Page 4

... T = 25º IXGH30N60C3C1 Fig. 2. Extended Output Characteristics @ 25º Volts CE Fig. 4. Dependence CE(sat) Junction Temperature 40A 20A 10A 100 125 T - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

Page 5

... C ies oes < 10V / ns C res 0 100 150 Fig. 11. Maximum Transient Thermal Impedance for IGBT 0.001 0.01 Pulse Width - Seconds IXGH30N60C3C1 Fig. 8. Gate Charge NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area = 125ºC = 5Ω 200 250 300 350 400 450 500 550 V - Volts CE 0 ...

Page 6

... Switching Times vs. Junction Temperature 110 160 t 100 f i 140 R = 5Ω 300V CE 120 80 100 40A, 20A IXGH30N60C3C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 15V 125º 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance d(off) = 15V 40A 20A C 6 ...

Page 7

... I = 40A 20A 105 115 125 0.0 Fig. 22. Maximum Transient Thermal Impedance for Diode 0.001 Pulse Width - Second IXGH30N60C3C1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) = 15V 125º 25º Amperes C Fig. 21. Forward Current vs. Forward Voltage T = 25º 125ºC J 0.4 ...

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