IXGH30N60C3 IXYS, IXGH30N60C3 Datasheet

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IXGH30N60C3

Manufacturer Part Number
IXGH30N60C3
Description
IGBT 60A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH30N60C3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 20A
Current - Collector (ic) (max)
60A
Power - Max
220W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.0
Tfi, Typ, Tj=25°c, Igbt, (ns)
47
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.33
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
High Speed PT IGBTs for
40-100kHz switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C110
CM
CES
GES
J
JM
stg
L
CES
CGR
GES
GEM
C
SOLD
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
V
V
I
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600V
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220 & TO-247)
TO-220
TO-263
TO-263
C
C
C
TM
GE
CE
CE
C
J
C
C
C
C
GE
= 250μA, V
= 20A, V
= 250μA, V
= 25°C to 150°C, R
= 25°C
= 25°C to 150°C
= 110°C
= 25°C
= 25°C, 1ms
= 0V, V
= 0V
= V
= 15V, T
600V IGBT
CES
GE
GE
VJ
= 15V, Note 1
GE
CE
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1MΩ
G
= 5Ω
T
T
J
J
= 125°C
= 125°C
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
-55 ... +150
-55 ... +150
I
CM
Min.
Characteristic Values
1.13/10
600
3.5
Maximum Ratings
= 60
± 20
± 30
600
600
150
150
220
300
260
60
30
2.5
3.0
3.0
Typ.
1.8
2.6
±100 nA
Nm/lb.in.
Max.
300 μA
5.5
3.0
15 μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
g
V
V
V
V
V
I
V
t
TO-263 (IXGA)
TO-220 (IXGP)
TO-247 (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for low switching losses
Square RBSOA
International standard packages
High power density
Low gate drive requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
G
E
C
= 600V
= 30A
≤ ≤ ≤ ≤ ≤ 3.0V
= 47ns
E
E
C
TAB = Collector
= Collector
C(TAB)
C(TAB)
DS100012A(11/08)
C (TAB)

Related parts for IXGH30N60C3

IXGH30N60C3 Summary of contents

Page 1

... V CES CE CES 0V ± 20V GES 20A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Maximum Ratings 600 600 ± 20 ± 150 = 5Ω 220 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 2.5 3.0 3.0 Characteristic Values Min ...

Page 2

... B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXGH30N60C3 TO-220 (IXGP) Outline Pins Gate 2 - Drain 3 - Source 4 - Drain TO-247 (IXGH) AD Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 ...

Page 3

... T = 25º IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 2. Extended Output Characteristics @ 25º Volts CE Fig. 4. Dependence CE(sat) Junction Temperature 40A 20A 10A 100 125 T - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

Page 4

... IXYS reserves the right to change limits, test conditions and dimensions Fig. 10. Reverse-Bias Safe Operating Area ies oes < 10V / ns C res 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 8. Gate Charge = 300V = 20A = NanoCoulombs G = 125º 5Ω G 200 300 400 500 V - Volts CE 0 600 10 ...

Page 5

... Switching Times vs. Junction Temperature 110 160 t f 100 140 R = 5Ω 120 80 100 40A, 20A IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Ω 15V 25º Amperes C Fig. 15. Inductive Turn-off d(off 125ºC, = 15V GE = 300V I = 40A 20A C 6 ...

Page 6

... Degrees Centigrade J IXYS reserves the right to change limits, test conditions and dimensions. Switching Times vs. Collector Current 5Ω 300V 20A d(on) = 15V 105 115 125 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 19. Inductive Turn- d(on) = 15V 125º 25º Amperes C IXYS REF: G_30N60C3(4D) 7-25- ...

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