IRGIB6B60KDPBF International Rectifier, IRGIB6B60KDPBF Datasheet

IGBT ULTRA FAST 600V 11A TO220FP

IRGIB6B60KDPBF

Manufacturer Part Number
IRGIB6B60KDPBF
Description
IGBT ULTRA FAST 600V 11A TO220FP
Manufacturer
International Rectifier
Datasheets

Specifications of IRGIB6B60KDPBF

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 5A
Current - Collector (ic) (max)
11A
Power - Max
38W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Collector Emitter Voltage Vces
2.2V
Power Dissipation Pd
32W
Collector Emitter Voltage V(br)ceo
600V
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGIB6B60KDPBF

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGIB6B60KDPBF
Quantity:
15 118
Features
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Absolute Maximum Ratings
V
I
I
I
I
I
I
I
V
V
P
P
T
T
Thermal / Mechanical Characteristics
R
R
R
R
Wt
C
C
CM
LM
F
F
FM
www.irf.com
J
STG
CES
ISOL
GE
D
D
θJC
θJC
θCS
θJA
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
c
G
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
C
E
IRGIB6B60KD
10 lbf.in (1.1N.m)
-55 to +175
TO-220
Full-Pak
Max.
Typ.
2500
0.50
600
±20
–––
–––
–––
7.0
9.0
6.0
2.0
11
22
22
18
38
19
V
I
t
V
C
sc
CES
CE(on)
= 6.0A, T
> 10µs, T
= 600V
Max.
typ. = 1.8V
–––
–––
3.9
6.0
62
PD-94427D
C
J
=90°C
=175°C
Units
Units
°C/W
°C
W
V
A
V
g
1
4/14/04

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IRGIB6B60KDPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE ...

Page 2

IRGIB6B60KD Electrical Characteristics @ T J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward ...

Page 3

T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 10 1 0.1 0. 100 V CE ...

Page 4

IRGIB6B60KD 18V VGE = 15V 16 VGE = 12V 14 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics ...

Page 5

3. 5. 10A (V) Fig Typical -40° ...

Page 6

IRGIB6B60KD 700 600 E ON 500 400 300 200 100 (A) Fig Typ. Energy Loss vs 150°C; L=1.4mH 100Ω 15V G GE 250 ...

Page 7

Ω Ω 100 Ω 150 Ω (A) Fig Typical Diode ...

Page 8

IRGIB6B60KD 300 250 200 150 100 50 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz Ω 47 Ω 100 Ω 150 Ω ...

Page 9

D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 1 0.10 0.05 0.02 0.1 ...

Page 10

IRGIB6B60KD DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DUT Fig.C.T.3 - S.C.SOA Circuit 10 L VCC diode clamp / 360V DUT Rg Fig.C.T.5 - Resistive Load ...

Page 11

I CE 300 250 tf 200 150 100 Eoff Loss -50 -0.20 0.30 time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J ...

Page 12

IRGIB6B60KD Package Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) 16.00 (.630) 15.80 (.622) 1.15 (.045) MIN 13.70 (.540) 13.50 (.530) 0.90 (.035) 1.40 (.055) 3X 0.70 (.028) 3X 1.05 (.042) 0.25 (.010) 2.54 ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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