IRGIB6B60KDPBF International Rectifier, IRGIB6B60KDPBF Datasheet - Page 2

• Manufacturer Part Number: IRGIB6B60KDPBF
• Description: IGBT ULTRA FAST 600V 11A TO220FP
• Manufacturer: International Rectifier

Specifications of IRGIB6B60KDPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 5A
• Current - Collector (ic) (max): 11A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Pd: 32W
• Collector Emitter Voltage V(br)ceo: 600V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGIB6B60KDPBF

IRGIB6B60KD
 Vcc =80% (V
‚ Energy losses include "tail" and diode reverse recovery.
V
∆V
V
V
∆V
gfe
I
V
I
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
L
C
C
C
RBSOA
SCSOA
I
E
t
I
Q
Electrical Characteristics @ T
Switching Characteristics @ T
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
SC (PEAK)
rr
rr
E
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
on
off
tot
rec
ies
oes
res
g
ge
gc
rr
2
(BR)CES
GE(th)
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
CES
), V
GE
= 20V, L =100µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 50Ω.
Min. Typ. Max. Units
Min. Typ. Max. Units
1.50
600
3.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
0.30
1.80
2.20
2.30
1.25
1.20
1.15
18.2
13.2
200
720
110
135
245
215
150
190
340
240
290
350
-10
4.5
3.0
1.0
1.9
9.2
7.5
90
—
—
25
17
28
17
18
34
10
—
50
70
10
1100
2.20
2.50
2.60
1.45
1.40
1.35
±100
27.3
2.85
13.8
150
500
210
245
455
230
260
300
560
255
435
175
455
5.5
34
26
22
37
26
27
51
15
91
13
—
—
—
—
—
—
—
mV/°C V
V/°C V
µA
nA
nC V
nH Measured 5 mm from package
nC di/dt = 400A/µs
µJ
ns
µJ
ns
pF
µs
µJ
ns
V
V
V
S
V
A
A
V
I
I
I
V
V
V
V
V
I
I
I
V
I
V
I
V
Ls= 150nH, T
I
V
Ls= 150nH, T
I
V
Ls= 150nH, T
I
V
Ls= 150nH, T
V
V
f = 1.0MHz
T
V
T
V
T
V
V
C
C
C
F
F
F
C
C
C
C
C
J
CC
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
GE
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 5A, V
= 5A, V
= 5A, V
= 5.0A
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 150°C, I
= 150°C, Vp = 600V, R
= 150°C
=500V,V
=360V,V
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V, V
= 400V
= 15V, R
= 15V, R
= 15V, R
= 15V, R
= 0V
= 30V
= 400V, I
= 15V, R
Conditions
= 15V
GE
GE
GE
GE
GE
, I
, I
C
C
GE
GE
GE
GE
C
C
CE
CE
CE
CC
CC
CC
CC
C
GE
= 500µA
= 1mA (25°C-150°C)
= 15V, T
= 15V, T
= 15V, T
C
G
G
G
G
G
Conditions
= 250µA
= 1mA (25°C-150°C)
F
J
= 5.0A, PW = 80µs
= +15V to 0V,R
= 0V
= 0V, T
= 0V, T
CE
J
J
J
= 400V
= 400V
= 400V
= 400V
= 600V
= 600V, T
= 600V, T
= 18A, Vp = 600V
= 100Ω, L = 1.4mH
= 100Ω, L = 1.4mH
= 100Ω, L = 1.4mH
= 150°C
= 100Ω, L = 1.4mH
= 5.0A, L = 1.4mH
= 100Ω, Ls= 150nH
= +15V to 0V
= 25°C
= 25°C
= 150°C
= 0V
J
J
J
J
J
= 25°C
= 150°C
= 175°C
= 150°C
= 175°C
d
J
J
d
G
= 150°C
= 175°C
= 100Ω
G
www.irf.com
= 100Ω
Ref.Fig.
Ref.Fig.
WF1,WF2
CT4,WF3
17,18,19
9,10,11
9,10,11
13,15
14,16
20,21
5,6,7
WF1
WF2
WF4
WF4
CT1
CT4
CT4
CT4
CT4
CT2
CT3
12
23
22
8
4