IRG4BC10UDPBF International Rectifier, IRG4BC10UDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4BC10UDPBF
• Description: IGBT N-CH DIO 600V 8.5A TO220AB
• Manufacturer: International Rectifier

Specifications of IRG4BC10UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 5A
• Current - Collector (ic) (max): 8.5A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 8.5A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 38W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4BC10UDPBF

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100
0.1
10
1
7
6
5
4
3
2
1
0
0.1
1
Square wave:
V
CE
, Collector-to-Emitter Voltage (V)
60% of rated
T = 25 C
J
Ideal diodes
I
voltage
o
V
20µs PULSE WIDTH
GE
= 15V
T = 150 C
J
1
o
10
f, Frequency (KHz)
RMS
100
10
1
5
T = 150 C
J
6
V
GE
10
o
7
, Gate-to-Emitter Voltage (V)
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
T = 25 C
J
sink
8
J
= 90°C
9
o
10
V
5µs PULSE WIDTH
CC
11
= 50V
W
12
13
100
14
3