IXDP20N60B IXYS, IXDP20N60B Datasheet - Page 4

• Manufacturer Part Number: IXDP20N60B
• Description: IGBT 600V 32A W/DIODE TO-220AB
• Manufacturer: IXYS

Specifications of IXDP20N60B

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 32A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic90, Tc=90°c, Igbt, (a): 20
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.8
• Tfi, Typ, Igbt, (ns): 55
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.4
• Rthjc, Max, Igbt, (°c/w): 0.90
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
E
E
I
CM
on
on
1.5
1.0
0.5
0.0
1.2
1.0
0.8
0.6
0.4
mJ
mJ
80
60
40
20
A
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
R
T
V
V
R
T
J
t
J
t
G
CE
GE
G
d(on)
r
100 200 300 400 500 600 700
= 22
= 125°C
= 125°C
= 22
= 300V
= ±15V
10
W
W
times versus collector current
times versus gate resistor
RBSOA
10
20
30
20
40
R
I
G
C
50
V
V
I
T
E
C
J
CE
GE
V
on
= 125°C
= 20A
CE
= 300V
= ±15V
30
60
E
t
t
d(on)
r
on
A
W
V
70
75
50
25
0
40
ns
30
20
10
0
ns
t
t
Z
E
E
thJC
off
off
0.001
1.00
0.75
0.50
0.25
0.00
0.01
K/W
0.8
0.6
0.4
0.2
0.0
mJ
0.1
mJ
5
1
10
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
-5
V
V
I
T
C
J
CE
GE
= 125°C
= 20A
= 300V
= ±15V
10
10
-4
single pulse
times versus collector current
times versus gate resistor
10
20
10
-3
30
10
IXDP 20N60 B
IXDP 20N60 BD1
-2
20
40
t
t
E
R
d(off)
f
10
off
G
I
-1
50
C
t
V
V
R
T
CE
GE
J
G
10
= 125°C
= 300V
= ±15V
= 22
30
60
0
IXDP20N06B
diode
IGBT
W
A
t
E
s
W
d(off)
off
t
f
10
70
400
300
200
100
0
1
ns
800
ns
600
400
200
0
4 - 4
t
t