IXDP20N60B IXYS, IXDP20N60B Datasheet
IXDP20N60B
Manufacturer Part Number
IXDP20N60B
Description
IGBT 600V 32A W/DIODE TO-220AB
Manufacturer
IXYS
Datasheet
1.IXDP20N60B.pdf
(4 pages)
Specifications of IXDP20N60B
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 20A
Current - Collector (ic) (max)
32A
Power - Max
140W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220AB
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
32
Ic90, Tc=90°c, Igbt, (a)
20
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
55
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.4
Rthjc, Max, Igbt, (°c/w)
0.90
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXDP20N60B
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXDP20N60BD1
Manufacturer:
IXYS
Quantity:
18 000
High Voltage IGBT
with optional Diode
High Speed,
Low Saturation Voltage
Symbol
V
V
V
V
I
I
I
RBSOA
t
(SCSOA)
P
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
V
V
I
I
V
© 2002 IXYS All rights reserved
C25
C90
CM
CES
GES
SC
J
stg
GEM
GE(th)
CE(sat)
CES
CGR
GES
C
(BR)CES
d
Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 µH
V
R
T
Mounting torque
Conditions
V
I
V
V
I
C
C
J
J
C
C
C
C
GE
GE
GE
CE
CE
G
= 22 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 90°C, t
= ±15 V, T
= ±15 V, V
= 25°C
= 0 V
= 0.4 mA, V
= V
= 0 V, V
= 20 A, V
CES
p
GE
=1 ms
J
GE
CE
= 125°C, R
= ± 20 V
CE
= 15 V
= 600 V, T
= V
IGBT
Diode
GE
GE
= 20 kW
G
J
= 22 W
= 125°C
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
G
IXDP 20N60B
IXDP 20N60 B
IXDP 20N60 BD1
min.
600
Characteristic Values
E
C
3
-55 ... +150
-40 ... +150
V
CEK
Maximum Ratings
0.4 - 0.6
typ.
I
0.7
2.2
CM
< V
IXDP 20N60B D1
= 60
±20
±30
300
600
600
140
G
CES
32
20
40
10
50
2
max.
± 500 nA
0.1 mA
2.8
5
E
C
Nm
mA
µs
°C
°C
°C
W
W
V
A
A
V
V
V
A
A
g
V
V
V
TO-220 AB
G = Gate,
C = Collector ,
Features
Advantages
Typical Applications
V
I
V
C25
NPT IGBT technology
low switching losses
low tail current
no latch up
short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
Space savings
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
High power density
CES
CE(sat) typ
G
C
E
= 600 V
= 32 A
= 2.2 V
E = Emitter
TAB = Collector
C (TAB)
1 - 4
Related parts for IXDP20N60B
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXDP20N60B Summary of contents
Page 1
... Symbol Conditions (BR)CES 0.4 mA GE(th CES CE CES ± GES CE(sat © 2002 IXYS All rights reserved IXDP 20N60 B IXDP 20N60 BD1 IXDP 20N60B IXDP 20N60B D1 Maximum Ratings 600 = 20 kW 600 GE ±20 ± < V CEK CES = 125° 140 50 -55 ... +150 -40 ... +150 300 0 ...
Page 2
... -di /dt = 400 A/µ 125° -di /dt = 100 A/µ thJC © 2002 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 800 480 125°C J 260 55 0.9 0.4 0.5 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
Page 3
... GE A 15V 13V Fig. 1 Typ. output characteristics 125° 25° Fig. 3 Typ. transfer characteristics Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved 11V 25° 20V 480V 15A 100 Q G IXDP 20N60 B IXDP 20N60 BD1 17V GE A 15V 13V ...
Page 4
... Fig. 9 Typ. turn on energy and switching times versus gate resistor 125° 100 200 300 400 500 600 700 Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved off 50 t d(on 1. off 0.50 ...